Demonstration of resonant tunneling effects in metal-double-insulator-metal (MI2M) diodes
Rectenna, which consist of a microscale antenna, combined with a rectifying diode, have great potential in energy harvesting, however, achieving high responsivity and low resistance is extremely difficult. Here, the authors demonstrate a metal-insulator-insulator metal diode which overcomes these li...
Guardado en:
Autores principales: | Amina Belkadi, Ayendra Weerakkody, Garret Moddel |
---|---|
Formato: | article |
Lenguaje: | EN |
Publicado: |
Nature Portfolio
2021
|
Materias: | |
Acceso en línea: | https://doaj.org/article/e96a090bb4a643c6aa56946241eae3e5 |
Etiquetas: |
Agregar Etiqueta
Sin Etiquetas, Sea el primero en etiquetar este registro!
|
Ejemplares similares
-
Resonant tunneling driven metal-insulator transition in double quantum-well structures of strongly correlated oxide
por: R. Yukawa, et al.
Publicado: (2021) -
Capacitance Analysis of Transient Behavior Improved Metal-Insulator-Semiconductor Tunnel Diodes With Ultra Thin Metal Surrounded Gate
por: Sung-Wei Huang, et al.
Publicado: (2021) -
Broadband terahertz resonant tunnelling diode transmitter integrated with coplanar‐waveguide‐fed slot‐ring antenna
por: Shuya Iwamatsu, et al.
Publicado: (2021) -
Plasmonic mode coupling and thin film sensing in metal–insulator–metal structures
por: N. Andam, et al.
Publicado: (2021) -
Giant tunnelling electroresistance in metal/ferroelectric/semiconductor tunnel junctions by engineering the Schottky barrier
por: Zhongnan Xi, et al.
Publicado: (2017)