Emerging novel electronic structure in hydrogen-Arsenene-halogen nanosheets: A computational study
Abstract Based on first-principles calculations including spin-orbit coupling, we investigated the stability and electronic structure of unexplored double-side decorated arsenenes. It has been found that these new double-side decorated arsenenes, which we call “hydrogen-arsenene-halogen (H-As-X, X i...
Guardado en:
Autores principales: | Ming-Yang Liu, Ze-Yu Li, Qing-Yuan Chen, Yang Huang, Chao Cao, Yao He |
---|---|
Formato: | article |
Lenguaje: | EN |
Publicado: |
Nature Portfolio
2017
|
Materias: | |
Acceso en línea: | https://doaj.org/article/e9baf99fd9f242088c390d9baae80fd5 |
Etiquetas: |
Agregar Etiqueta
Sin Etiquetas, Sea el primero en etiquetar este registro!
|
Ejemplares similares
-
Two-dimensional tessellation by molecular tiles constructed from halogen–halogen and halogen–metal networks
por: Fang Cheng, et al.
Publicado: (2018) -
Performance of arsenene and antimonene double-gate MOSFETs from first principles
por: Giovanni Pizzi, et al.
Publicado: (2016) -
Chemical stability of hydrogen boride nanosheets in water
por: Kurt Irvin M. Rojas, et al.
Publicado: (2021) -
Arsenene-mediated multiple independently targeted reactive oxygen species burst for cancer therapy
por: Na Kong, et al.
Publicado: (2021) -
Dissipative transport and phonon scattering suppression via valley engineering in single-layer antimonene and arsenene field-effect transistors
por: Jiang Cao, et al.
Publicado: (2021)