Analysis of fill factor losses in thin film CdS/CdTe photovoltaic devices
In this paper, CdS/CdTe solar cells with conversion efficiency values of η = 5.1, 3.6, 3.5, and 2.9% are analyzed and the effects of the device parameters, such as the diode ideality factor (n), the saturation current-density (Jo), and the series resistance (Rs,) on the fill factor, both in the...
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| Autores principales: | , , , , , , |
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| Formato: | article |
| Lenguaje: | EN |
| Publicado: |
D.Ghitu Institute of Electronic Engineering and Nanotechnologies
2010
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| Materias: | |
| Acceso en línea: | https://doaj.org/article/ea4aca19d85a4443a95339c187526a9e |
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| Sumario: | In this paper, CdS/CdTe solar cells with conversion efficiency values of η = 5.1, 3.6,
3.5, and 2.9% are analyzed and the effects of the device parameters, such as the diode ideality
factor (n), the saturation current-density (Jo), and the series resistance (Rs,) on the fill factor,
both in the dark and under illumination are investigated. The solar cells with efficiency η =
5.1, 3.6, and 2.9% were grown from 3N source material. A solar cell with 3.5% efficiency
was made of a 6N CdTe source. The temperature current density-voltage (J-U-T) and capacitance-voltage characteristics (C-U-T) of CdS/CdTe solar cells were measured in a temperature
range of 303-383 K. For all studied cells, the diode ideality factor in the dark is much higher
than 2 and the saturation current density increases under illumination, while both the series
and shunt resistances decrease under illumination and temperature. |
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