Analysis of fill factor losses in thin film CdS/CdTe photovoltaic devices
In this paper, CdS/CdTe solar cells with conversion efficiency values of η = 5.1, 3.6, 3.5, and 2.9% are analyzed and the effects of the device parameters, such as the diode ideality factor (n), the saturation current-density (Jo), and the series resistance (Rs,) on the fill factor, both in the...
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D.Ghitu Institute of Electronic Engineering and Nanotechnologies
2010
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oai:doaj.org-article:ea4aca19d85a4443a95339c187526a9e2021-11-21T12:03:42ZAnalysis of fill factor losses in thin film CdS/CdTe photovoltaic devices2537-63651810-648Xhttps://doaj.org/article/ea4aca19d85a4443a95339c187526a9e2010-12-01T00:00:00Zhttps://mjps.nanotech.md/archive/2010/article/4295https://doaj.org/toc/1810-648Xhttps://doaj.org/toc/2537-6365In this paper, CdS/CdTe solar cells with conversion efficiency values of η = 5.1, 3.6, 3.5, and 2.9% are analyzed and the effects of the device parameters, such as the diode ideality factor (n), the saturation current-density (Jo), and the series resistance (Rs,) on the fill factor, both in the dark and under illumination are investigated. The solar cells with efficiency η = 5.1, 3.6, and 2.9% were grown from 3N source material. A solar cell with 3.5% efficiency was made of a 6N CdTe source. The temperature current density-voltage (J-U-T) and capacitance-voltage characteristics (C-U-T) of CdS/CdTe solar cells were measured in a temperature range of 303-383 K. For all studied cells, the diode ideality factor in the dark is much higher than 2 and the saturation current density increases under illumination, while both the series and shunt resistances decrease under illumination and temperature. Potlog, TamaraSpalatu, NicolaeCiobanu, VasileHiie, J.Mere, ArvoMikli, V.Valdna, V.D.Ghitu Institute of Electronic Engineering and NanotechnologiesarticlePhysicsQC1-999ElectronicsTK7800-8360ENMoldavian Journal of the Physical Sciences, Vol 9, Iss 3-4, Pp 363-367 (2010) |
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Physics QC1-999 Electronics TK7800-8360 |
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Physics QC1-999 Electronics TK7800-8360 Potlog, Tamara Spalatu, Nicolae Ciobanu, Vasile Hiie, J. Mere, Arvo Mikli, V. Valdna, V. Analysis of fill factor losses in thin film CdS/CdTe photovoltaic devices |
description |
In this paper, CdS/CdTe solar cells with conversion efficiency values of η = 5.1, 3.6,
3.5, and 2.9% are analyzed and the effects of the device parameters, such as the diode ideality
factor (n), the saturation current-density (Jo), and the series resistance (Rs,) on the fill factor,
both in the dark and under illumination are investigated. The solar cells with efficiency η =
5.1, 3.6, and 2.9% were grown from 3N source material. A solar cell with 3.5% efficiency
was made of a 6N CdTe source. The temperature current density-voltage (J-U-T) and capacitance-voltage characteristics (C-U-T) of CdS/CdTe solar cells were measured in a temperature
range of 303-383 K. For all studied cells, the diode ideality factor in the dark is much higher
than 2 and the saturation current density increases under illumination, while both the series
and shunt resistances decrease under illumination and temperature. |
format |
article |
author |
Potlog, Tamara Spalatu, Nicolae Ciobanu, Vasile Hiie, J. Mere, Arvo Mikli, V. Valdna, V. |
author_facet |
Potlog, Tamara Spalatu, Nicolae Ciobanu, Vasile Hiie, J. Mere, Arvo Mikli, V. Valdna, V. |
author_sort |
Potlog, Tamara |
title |
Analysis of fill factor losses in thin film CdS/CdTe photovoltaic devices |
title_short |
Analysis of fill factor losses in thin film CdS/CdTe photovoltaic devices |
title_full |
Analysis of fill factor losses in thin film CdS/CdTe photovoltaic devices |
title_fullStr |
Analysis of fill factor losses in thin film CdS/CdTe photovoltaic devices |
title_full_unstemmed |
Analysis of fill factor losses in thin film CdS/CdTe photovoltaic devices |
title_sort |
analysis of fill factor losses in thin film cds/cdte photovoltaic devices |
publisher |
D.Ghitu Institute of Electronic Engineering and Nanotechnologies |
publishDate |
2010 |
url |
https://doaj.org/article/ea4aca19d85a4443a95339c187526a9e |
work_keys_str_mv |
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