Giant electron-hole transport asymmetry in ultra-short quantum transistors
By utilizing electron-hole asymmetry in ultra-short single-walled carbon nanotube (SWCNT) transistors, McRaeet al., develop ‘two-in-one’ SWCNT quantum devices that can switch from behaving as quantum-dot transistors for holes to quantum buses for electrons by changing the transistor’s gate voltage...
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| Autores principales: | , , , |
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| Formato: | article |
| Lenguaje: | EN |
| Publicado: |
Nature Portfolio
2017
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| Materias: | |
| Acceso en línea: | https://doaj.org/article/ea6fec4d8e8c4847ab0f38d8abfbfec2 |
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| Sumario: | By utilizing electron-hole asymmetry in ultra-short single-walled carbon nanotube (SWCNT) transistors, McRaeet al., develop ‘two-in-one’ SWCNT quantum devices that can switch from behaving as quantum-dot transistors for holes to quantum buses for electrons by changing the transistor’s gate voltage |
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