Giant electron-hole transport asymmetry in ultra-short quantum transistors
By utilizing electron-hole asymmetry in ultra-short single-walled carbon nanotube (SWCNT) transistors, McRaeet al., develop ‘two-in-one’ SWCNT quantum devices that can switch from behaving as quantum-dot transistors for holes to quantum buses for electrons by changing the transistor’s gate voltage...
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| Main Authors: | , , , |
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| Format: | article |
| Language: | EN |
| Published: |
Nature Portfolio
2017
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| Subjects: | |
| Online Access: | https://doaj.org/article/ea6fec4d8e8c4847ab0f38d8abfbfec2 |
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| Summary: | By utilizing electron-hole asymmetry in ultra-short single-walled carbon nanotube (SWCNT) transistors, McRaeet al., develop ‘two-in-one’ SWCNT quantum devices that can switch from behaving as quantum-dot transistors for holes to quantum buses for electrons by changing the transistor’s gate voltage |
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