Giant electron-hole transport asymmetry in ultra-short quantum transistors

By utilizing electron-hole asymmetry in ultra-short single-walled carbon nanotube (SWCNT) transistors, McRaeet al., develop ‘two-in-one’ SWCNT quantum devices that can switch from behaving as quantum-dot transistors for holes to quantum buses for electrons by changing the transistor’s gate voltage...

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Autores principales:	A. C. McRae, V. Tayari, J. M. Porter, A. R. Champagne
Formato:	article
Lenguaje:	EN
Publicado:	Nature Portfolio 2017
Materias:	Science Q
Acceso en línea:	https://doaj.org/article/ea6fec4d8e8c4847ab0f38d8abfbfec2
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id	oai:doaj.org-article:ea6fec4d8e8c4847ab0f38d8abfbfec2
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spelling	oai:doaj.org-article:ea6fec4d8e8c4847ab0f38d8abfbfec22021-12-02T17:06:01ZGiant electron-hole transport asymmetry in ultra-short quantum transistors10.1038/ncomms154912041-1723https://doaj.org/article/ea6fec4d8e8c4847ab0f38d8abfbfec22017-05-01T00:00:00Zhttps://doi.org/10.1038/ncomms15491https://doaj.org/toc/2041-1723By utilizing electron-hole asymmetry in ultra-short single-walled carbon nanotube (SWCNT) transistors, McRaeet al., develop ‘two-in-one’ SWCNT quantum devices that can switch from behaving as quantum-dot transistors for holes to quantum buses for electrons by changing the transistor’s gate voltageA. C. McRaeV. TayariJ. M. PorterA. R. ChampagneNature PortfolioarticleScienceQENNature Communications, Vol 8, Iss 1, Pp 1-8 (2017)
institution	DOAJ
collection	DOAJ
language	EN
topic	Science Q
spellingShingle	Science Q A. C. McRae V. Tayari J. M. Porter A. R. Champagne Giant electron-hole transport asymmetry in ultra-short quantum transistors
description	By utilizing electron-hole asymmetry in ultra-short single-walled carbon nanotube (SWCNT) transistors, McRaeet al., develop ‘two-in-one’ SWCNT quantum devices that can switch from behaving as quantum-dot transistors for holes to quantum buses for electrons by changing the transistor’s gate voltage
format	article
author	A. C. McRae V. Tayari J. M. Porter A. R. Champagne
author_facet	A. C. McRae V. Tayari J. M. Porter A. R. Champagne
author_sort	A. C. McRae
title	Giant electron-hole transport asymmetry in ultra-short quantum transistors
title_short	Giant electron-hole transport asymmetry in ultra-short quantum transistors
title_full	Giant electron-hole transport asymmetry in ultra-short quantum transistors
title_fullStr	Giant electron-hole transport asymmetry in ultra-short quantum transistors
title_full_unstemmed	Giant electron-hole transport asymmetry in ultra-short quantum transistors
title_sort	giant electron-hole transport asymmetry in ultra-short quantum transistors
publisher	Nature Portfolio
publishDate	2017
url	https://doaj.org/article/ea6fec4d8e8c4847ab0f38d8abfbfec2
work_keys_str_mv	AT acmcrae giantelectronholetransportasymmetryinultrashortquantumtransistors AT vtayari giantelectronholetransportasymmetryinultrashortquantumtransistors AT jmporter giantelectronholetransportasymmetryinultrashortquantumtransistors AT archampagne giantelectronholetransportasymmetryinultrashortquantumtransistors
_version_	1718381765840601088

Giant electron-hole transport asymmetry in ultra-short quantum transistors

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