Giant electron-hole transport asymmetry in ultra-short quantum transistors

Giant electron-hole transport asymmetry in ultra-short quantum transistors

By utilizing electron-hole asymmetry in ultra-short single-walled carbon nanotube (SWCNT) transistors, McRaeet al., develop ‘two-in-one’ SWCNT quantum devices that can switch from behaving as quantum-dot transistors for holes to quantum buses for electrons by changing the transistor’s gate voltage...

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Autores principales: A. C. McRae, V. Tayari, J. M. Porter, A. R. Champagne
Formato: article
Lenguaje:EN
Publicado: Nature Portfolio 2017
Materias:
Science
Q
Acceso en línea:https://doaj.org/article/ea6fec4d8e8c4847ab0f38d8abfbfec2
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