Pixellated Perovskite Photodiode on IGZO Thin Film Transistor Backplane for Low Dose Indirect X-Ray Detection
The integration of perovskite photodetectors with thin-film transistor (TFT) backplane or complementary metal-oxide-semiconductor CMOS circuit is a key step towards prototyping perovskite-based image sensors. Here, we demonstrate a pixel configuration for indirect X-ray detection comprising of IGZO...
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| Main Authors: | , , , , , , , , , , |
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| Format: | article |
| Language: | EN |
| Published: |
IEEE
2021
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| Subjects: | |
| Online Access: | https://doaj.org/article/eabf6b8e1d444bff958a619a8682dc4b |
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| Summary: | The integration of perovskite photodetectors with thin-film transistor (TFT) backplane or complementary metal-oxide-semiconductor CMOS circuit is a key step towards prototyping perovskite-based image sensors. Here, we demonstrate a pixel configuration for indirect X-ray detection comprising of IGZO TFTs and perovskite photodiodes (PDs). The perovskite photodiode is patterned by a two-step deposition method. Our integrated TFT/PD pixel shows a weak light detection capability down to 4 nW cm<sup>−2</sup> and a fast-transient response to the pulse light and gate switching. Combining with a CsI scintillator, the integrated pixel achieves a specific X-ray sensitivity of 8.2 <inline-formula> <tex-math notation="LaTeX">$8.2 \times 10^{2} \mu \mathrm{C} \mathrm{mGy}_{\text {air }}^{-1} \mathrm{~cm}^{-3}$ </tex-math></inline-formula>. Theoretically, with a state-of-the-art scintillator, the new pixel can provide a detectable signal for X-ray imaging at a dose rate as low as <inline-formula> <tex-math notation="LaTeX">$10 \mu \mathrm{Gy}_{\text {air }} \mathrm{s}^{-1}$ </tex-math></inline-formula>. This work provides an advanced pixel design for high resolution, high sensitivity, and high frame-rate flat-panel imager. |
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