Pixellated Perovskite Photodiode on IGZO Thin Film Transistor Backplane for Low Dose Indirect X-Ray Detection

The integration of perovskite photodetectors with thin-film transistor (TFT) backplane or complementary metal-oxide-semiconductor CMOS circuit is a key step towards prototyping perovskite-based image sensors. Here, we demonstrate a pixel configuration for indirect X-ray detection comprising of IGZO...

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Autores principales:	Taoyu Zou, Ben Xiang, Yangbing Xu, Ya Wang, Chuan Liu, Jun Chen, Kai Wang, Qing Dai, Shengdong Zhang, Yong-Young Noh, Hang Zhou
Formato:	article
Lenguaje:	EN
Publicado:	IEEE 2021
Materias:	Flat-panel imager IGZO perovskite thin-film transistors X-ray detectors Electrical engineering. Electronics. Nuclear engineering TK1-9971
Acceso en línea:	https://doaj.org/article/eabf6b8e1d444bff958a619a8682dc4b
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spelling	oai:doaj.org-article:eabf6b8e1d444bff958a619a8682dc4b2021-11-19T00:01:40ZPixellated Perovskite Photodiode on IGZO Thin Film Transistor Backplane for Low Dose Indirect X-Ray Detection2168-673410.1109/JEDS.2020.3040771https://doaj.org/article/eabf6b8e1d444bff958a619a8682dc4b2021-01-01T00:00:00Zhttps://ieeexplore.ieee.org/document/9272303/https://doaj.org/toc/2168-6734The integration of perovskite photodetectors with thin-film transistor (TFT) backplane or complementary metal-oxide-semiconductor CMOS circuit is a key step towards prototyping perovskite-based image sensors. Here, we demonstrate a pixel configuration for indirect X-ray detection comprising of IGZO TFTs and perovskite photodiodes (PDs). The perovskite photodiode is patterned by a two-step deposition method. Our integrated TFT/PD pixel shows a weak light detection capability down to 4 nW cm<sup>−2</sup> and a fast-transient response to the pulse light and gate switching. Combining with a CsI scintillator, the integrated pixel achieves a specific X-ray sensitivity of 8.2 <inline-formula> <tex-math notation="LaTeX">$8.2 \times 10^{2} \mu \mathrm{C} \mathrm{mGy}_{\text {air }}^{-1} \mathrm{~cm}^{-3}$ </tex-math></inline-formula>. Theoretically, with a state-of-the-art scintillator, the new pixel can provide a detectable signal for X-ray imaging at a dose rate as low as <inline-formula> <tex-math notation="LaTeX">$10 \mu \mathrm{Gy}_{\text {air }} \mathrm{s}^{-1}$ </tex-math></inline-formula>. This work provides an advanced pixel design for high resolution, high sensitivity, and high frame-rate flat-panel imager.Taoyu ZouBen XiangYangbing XuYa WangChuan LiuJun ChenKai WangQing DaiShengdong ZhangYong-Young NohHang ZhouIEEEarticleFlat-panel imagerIGZOperovskitethin-film transistorsX-ray detectorsElectrical engineering. Electronics. Nuclear engineeringTK1-9971ENIEEE Journal of the Electron Devices Society, Vol 9, Pp 96-101 (2021)
institution	DOAJ
collection	DOAJ
language	EN
topic	Flat-panel imager IGZO perovskite thin-film transistors X-ray detectors Electrical engineering. Electronics. Nuclear engineering TK1-9971
spellingShingle	Flat-panel imager IGZO perovskite thin-film transistors X-ray detectors Electrical engineering. Electronics. Nuclear engineering TK1-9971 Taoyu Zou Ben Xiang Yangbing Xu Ya Wang Chuan Liu Jun Chen Kai Wang Qing Dai Shengdong Zhang Yong-Young Noh Hang Zhou Pixellated Perovskite Photodiode on IGZO Thin Film Transistor Backplane for Low Dose Indirect X-Ray Detection
description	The integration of perovskite photodetectors with thin-film transistor (TFT) backplane or complementary metal-oxide-semiconductor CMOS circuit is a key step towards prototyping perovskite-based image sensors. Here, we demonstrate a pixel configuration for indirect X-ray detection comprising of IGZO TFTs and perovskite photodiodes (PDs). The perovskite photodiode is patterned by a two-step deposition method. Our integrated TFT/PD pixel shows a weak light detection capability down to 4 nW cm<sup>−2</sup> and a fast-transient response to the pulse light and gate switching. Combining with a CsI scintillator, the integrated pixel achieves a specific X-ray sensitivity of 8.2 <inline-formula> <tex-math notation="LaTeX">$8.2 \times 10^{2} \mu \mathrm{C} \mathrm{mGy}_{\text {air }}^{-1} \mathrm{~cm}^{-3}$ </tex-math></inline-formula>. Theoretically, with a state-of-the-art scintillator, the new pixel can provide a detectable signal for X-ray imaging at a dose rate as low as <inline-formula> <tex-math notation="LaTeX">$10 \mu \mathrm{Gy}_{\text {air }} \mathrm{s}^{-1}$ </tex-math></inline-formula>. This work provides an advanced pixel design for high resolution, high sensitivity, and high frame-rate flat-panel imager.
format	article
author	Taoyu Zou Ben Xiang Yangbing Xu Ya Wang Chuan Liu Jun Chen Kai Wang Qing Dai Shengdong Zhang Yong-Young Noh Hang Zhou
author_facet	Taoyu Zou Ben Xiang Yangbing Xu Ya Wang Chuan Liu Jun Chen Kai Wang Qing Dai Shengdong Zhang Yong-Young Noh Hang Zhou
author_sort	Taoyu Zou
title	Pixellated Perovskite Photodiode on IGZO Thin Film Transistor Backplane for Low Dose Indirect X-Ray Detection
title_short	Pixellated Perovskite Photodiode on IGZO Thin Film Transistor Backplane for Low Dose Indirect X-Ray Detection
title_full	Pixellated Perovskite Photodiode on IGZO Thin Film Transistor Backplane for Low Dose Indirect X-Ray Detection
title_fullStr	Pixellated Perovskite Photodiode on IGZO Thin Film Transistor Backplane for Low Dose Indirect X-Ray Detection
title_full_unstemmed	Pixellated Perovskite Photodiode on IGZO Thin Film Transistor Backplane for Low Dose Indirect X-Ray Detection
title_sort	pixellated perovskite photodiode on igzo thin film transistor backplane for low dose indirect x-ray detection
publisher	IEEE
publishDate	2021
url	https://doaj.org/article/eabf6b8e1d444bff958a619a8682dc4b
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Pixellated Perovskite Photodiode on IGZO Thin Film Transistor Backplane for Low Dose Indirect X-Ray Detection

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