Spin Quintet in a Silicon Double Quantum Dot: Spin Blockade and Relaxation

Spins in gate-defined silicon quantum dots are promising candidates for implementing large-scale quantum computing. To read the spin state of these qubits, the mechanism that has provided the highest fidelity is spin-to-charge conversion via singlet-triplet spin blockade, which can be detected in si...

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Detalles Bibliográficos
Autores principales: Theodor Lundberg, Jing Li, Louis Hutin, Benoit Bertrand, David J. Ibberson, Chang-Min Lee, David J. Niegemann, Matias Urdampilleta, Nadia Stelmashenko, Tristan Meunier, Jason W. A. Robinson, Lisa Ibberson, Maud Vinet, Yann-Michel Niquet, M. Fernando Gonzalez-Zalba
Formato: article
Lenguaje:EN
Publicado: American Physical Society 2020
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Acceso en línea:https://doaj.org/article/eb9f71a0a9c8445eb900db258d6b98c5
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Sumario:Spins in gate-defined silicon quantum dots are promising candidates for implementing large-scale quantum computing. To read the spin state of these qubits, the mechanism that has provided the highest fidelity is spin-to-charge conversion via singlet-triplet spin blockade, which can be detected in situ using gate-based dispersive sensing. In systems with a complex energy spectrum, like silicon quantum dots, accurately identifying when singlet-triplet blockade occurs is hence of major importance for scalable qubit readout. In this work, we present a description of spin-blockade physics in a tunnel-coupled silicon double quantum dot defined in the corners of a split-gate transistor. Using gate-based magnetospectroscopy, we report successive steps of spin blockade and spin-blockade lifting involving spin states with total spin angular momentum up to S=3. More particularly, we report the formation of a hybridized spin-quintet state and show triplet-quintet and quintet-septet spin blockade, enabling studies of the quintet relaxation dynamics from which we find T_{1}∼4  μs. Finally, we develop a quantum capacitance model that can be applied generally to reconstruct the energy spectrum of a double quantum dot, including the spin-dependent tunnel couplings and the energy splitting between different spin manifolds. Our results allow for the possibility of using Si complementary metal-oxide-semiconductor quantum dots as a tunable platform for studying high-spin systems.