Spin Quintet in a Silicon Double Quantum Dot: Spin Blockade and Relaxation

Spins in gate-defined silicon quantum dots are promising candidates for implementing large-scale quantum computing. To read the spin state of these qubits, the mechanism that has provided the highest fidelity is spin-to-charge conversion via singlet-triplet spin blockade, which can be detected in si...

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Autores principales:	Theodor Lundberg, Jing Li, Louis Hutin, Benoit Bertrand, David J. Ibberson, Chang-Min Lee, David J. Niegemann, Matias Urdampilleta, Nadia Stelmashenko, Tristan Meunier, Jason W. A. Robinson, Lisa Ibberson, Maud Vinet, Yann-Michel Niquet, M. Fernando Gonzalez-Zalba
Formato:	article
Lenguaje:	EN
Publicado:	American Physical Society 2020
Materias:	Physics QC1-999
Acceso en línea:	https://doaj.org/article/eb9f71a0a9c8445eb900db258d6b98c5
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spelling	oai:doaj.org-article:eb9f71a0a9c8445eb900db258d6b98c52021-12-02T12:18:24ZSpin Quintet in a Silicon Double Quantum Dot: Spin Blockade and Relaxation10.1103/PhysRevX.10.0410102160-3308https://doaj.org/article/eb9f71a0a9c8445eb900db258d6b98c52020-10-01T00:00:00Zhttp://doi.org/10.1103/PhysRevX.10.041010http://doi.org/10.1103/PhysRevX.10.041010https://doaj.org/toc/2160-3308Spins in gate-defined silicon quantum dots are promising candidates for implementing large-scale quantum computing. To read the spin state of these qubits, the mechanism that has provided the highest fidelity is spin-to-charge conversion via singlet-triplet spin blockade, which can be detected in situ using gate-based dispersive sensing. In systems with a complex energy spectrum, like silicon quantum dots, accurately identifying when singlet-triplet blockade occurs is hence of major importance for scalable qubit readout. In this work, we present a description of spin-blockade physics in a tunnel-coupled silicon double quantum dot defined in the corners of a split-gate transistor. Using gate-based magnetospectroscopy, we report successive steps of spin blockade and spin-blockade lifting involving spin states with total spin angular momentum up to S=3. More particularly, we report the formation of a hybridized spin-quintet state and show triplet-quintet and quintet-septet spin blockade, enabling studies of the quintet relaxation dynamics from which we find T_{1}∼4 μs. Finally, we develop a quantum capacitance model that can be applied generally to reconstruct the energy spectrum of a double quantum dot, including the spin-dependent tunnel couplings and the energy splitting between different spin manifolds. Our results allow for the possibility of using Si complementary metal-oxide-semiconductor quantum dots as a tunable platform for studying high-spin systems.Theodor LundbergJing LiLouis HutinBenoit BertrandDavid J. IbbersonChang-Min LeeDavid J. NiegemannMatias UrdampilletaNadia StelmashenkoTristan MeunierJason W. A. RobinsonLisa IbbersonMaud VinetYann-Michel NiquetM. Fernando Gonzalez-ZalbaAmerican Physical SocietyarticlePhysicsQC1-999ENPhysical Review X, Vol 10, Iss 4, p 041010 (2020)
institution	DOAJ
collection	DOAJ
language	EN
topic	Physics QC1-999
spellingShingle	Physics QC1-999 Theodor Lundberg Jing Li Louis Hutin Benoit Bertrand David J. Ibberson Chang-Min Lee David J. Niegemann Matias Urdampilleta Nadia Stelmashenko Tristan Meunier Jason W. A. Robinson Lisa Ibberson Maud Vinet Yann-Michel Niquet M. Fernando Gonzalez-Zalba Spin Quintet in a Silicon Double Quantum Dot: Spin Blockade and Relaxation
description	Spins in gate-defined silicon quantum dots are promising candidates for implementing large-scale quantum computing. To read the spin state of these qubits, the mechanism that has provided the highest fidelity is spin-to-charge conversion via singlet-triplet spin blockade, which can be detected in situ using gate-based dispersive sensing. In systems with a complex energy spectrum, like silicon quantum dots, accurately identifying when singlet-triplet blockade occurs is hence of major importance for scalable qubit readout. In this work, we present a description of spin-blockade physics in a tunnel-coupled silicon double quantum dot defined in the corners of a split-gate transistor. Using gate-based magnetospectroscopy, we report successive steps of spin blockade and spin-blockade lifting involving spin states with total spin angular momentum up to S=3. More particularly, we report the formation of a hybridized spin-quintet state and show triplet-quintet and quintet-septet spin blockade, enabling studies of the quintet relaxation dynamics from which we find T_{1}∼4 μs. Finally, we develop a quantum capacitance model that can be applied generally to reconstruct the energy spectrum of a double quantum dot, including the spin-dependent tunnel couplings and the energy splitting between different spin manifolds. Our results allow for the possibility of using Si complementary metal-oxide-semiconductor quantum dots as a tunable platform for studying high-spin systems.
format	article
author	Theodor Lundberg Jing Li Louis Hutin Benoit Bertrand David J. Ibberson Chang-Min Lee David J. Niegemann Matias Urdampilleta Nadia Stelmashenko Tristan Meunier Jason W. A. Robinson Lisa Ibberson Maud Vinet Yann-Michel Niquet M. Fernando Gonzalez-Zalba
author_facet	Theodor Lundberg Jing Li Louis Hutin Benoit Bertrand David J. Ibberson Chang-Min Lee David J. Niegemann Matias Urdampilleta Nadia Stelmashenko Tristan Meunier Jason W. A. Robinson Lisa Ibberson Maud Vinet Yann-Michel Niquet M. Fernando Gonzalez-Zalba
author_sort	Theodor Lundberg
title	Spin Quintet in a Silicon Double Quantum Dot: Spin Blockade and Relaxation
title_short	Spin Quintet in a Silicon Double Quantum Dot: Spin Blockade and Relaxation
title_full	Spin Quintet in a Silicon Double Quantum Dot: Spin Blockade and Relaxation
title_fullStr	Spin Quintet in a Silicon Double Quantum Dot: Spin Blockade and Relaxation
title_full_unstemmed	Spin Quintet in a Silicon Double Quantum Dot: Spin Blockade and Relaxation
title_sort	spin quintet in a silicon double quantum dot: spin blockade and relaxation
publisher	American Physical Society
publishDate	2020
url	https://doaj.org/article/eb9f71a0a9c8445eb900db258d6b98c5
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Spin Quintet in a Silicon Double Quantum Dot: Spin Blockade and Relaxation

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