Universal growth of ultra-thin III–V semiconductor single crystals
Here, the authors synthesize a variety of ultra-thin III–V single crystals, ranging from ultra-narrow to wide bandgap semiconductors, through enhancing the interfacial interaction between the III–V crystals and the growth substrates.
Guardado en:
Autores principales: | Yunxu Chen, Jinxin Liu, Mengqi Zeng, Fangyun Lu, Tianrui Lv, Yuan Chang, Haihui Lan, Bin Wei, Rong Sun, Junfeng Gao, Zhongchang Wang, Lei Fu |
---|---|
Formato: | article |
Lenguaje: | EN |
Publicado: |
Nature Portfolio
2020
|
Materias: | |
Acceso en línea: | https://doaj.org/article/ec0ef4a402d74ae8ad5aad3330243759 |
Etiquetas: |
Agregar Etiqueta
Sin Etiquetas, Sea el primero en etiquetar este registro!
|
Ejemplares similares
-
Ultra-thin van der Waals crystals as semiconductor quantum wells
por: Johanna Zultak, et al.
Publicado: (2020) -
Ultra-thin 2D transition metal monochalcogenide crystals by planarized reactions
por: Hao-Ting Chin, et al.
Publicado: (2021) -
Capacitance Analysis of Transient Behavior Improved Metal-Insulator-Semiconductor Tunnel Diodes With Ultra Thin Metal Surrounded Gate
por: Sung-Wei Huang, et al.
Publicado: (2021) -
A Hybrid Gate Dielectrics of Ion Gel with Ultra-Thin Passivation Layer for High-Performance Transistors Based on Two-Dimensional Semiconductor Channels
por: Hyunjin Jo, et al.
Publicado: (2017) -
Resonatorless optical bistability in transmission of thin semiconductor film
por: Hadji, Piotr, et al.
Publicado: (2005)