Tailoring Heterovalent Interface Formation with Light

Abstract Integrating different semiconductor materials into an epitaxial device structure offers additional degrees of freedom to select for optimal material properties in each layer. However, interfaces between materials with different valences (i.e. III-V, II-VI and IV semiconductors) can be diffi...

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Autores principales:	Kwangwook Park, Kirstin Alberi
Formato:	article
Lenguaje:	EN
Publicado:	Nature Portfolio 2017
Materias:	Medicine R Science Q
Acceso en línea:	https://doaj.org/article/ec21dcb3c8764520aebc7053cf8fb5d7
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spelling	oai:doaj.org-article:ec21dcb3c8764520aebc7053cf8fb5d72021-12-02T11:40:22ZTailoring Heterovalent Interface Formation with Light10.1038/s41598-017-07670-22045-2322https://doaj.org/article/ec21dcb3c8764520aebc7053cf8fb5d72017-08-01T00:00:00Zhttps://doi.org/10.1038/s41598-017-07670-2https://doaj.org/toc/2045-2322Abstract Integrating different semiconductor materials into an epitaxial device structure offers additional degrees of freedom to select for optimal material properties in each layer. However, interfaces between materials with different valences (i.e. III-V, II-VI and IV semiconductors) can be difficult to form with high quality. Using ZnSe/GaAs as a model system, we explore the use of ultraviolet (UV) illumination during heterovalent interface growth by molecular beam epitaxy as a way to modify the interface properties. We find that UV illumination alters the mixture of chemical bonds at the interface, permitting the formation of Ga-Se bonds that help to passivate the underlying GaAs layer. Illumination also helps to reduce defects in the ZnSe epilayer. These results suggest that moderate UV illumination during growth may be used as a way to improve the optical properties of both the GaAs and ZnSe layers on either side of the interface.Kwangwook ParkKirstin AlberiNature PortfolioarticleMedicineRScienceQENScientific Reports, Vol 7, Iss 1, Pp 1-12 (2017)
institution	DOAJ
collection	DOAJ
language	EN
topic	Medicine R Science Q
spellingShingle	Medicine R Science Q Kwangwook Park Kirstin Alberi Tailoring Heterovalent Interface Formation with Light
description	Abstract Integrating different semiconductor materials into an epitaxial device structure offers additional degrees of freedom to select for optimal material properties in each layer. However, interfaces between materials with different valences (i.e. III-V, II-VI and IV semiconductors) can be difficult to form with high quality. Using ZnSe/GaAs as a model system, we explore the use of ultraviolet (UV) illumination during heterovalent interface growth by molecular beam epitaxy as a way to modify the interface properties. We find that UV illumination alters the mixture of chemical bonds at the interface, permitting the formation of Ga-Se bonds that help to passivate the underlying GaAs layer. Illumination also helps to reduce defects in the ZnSe epilayer. These results suggest that moderate UV illumination during growth may be used as a way to improve the optical properties of both the GaAs and ZnSe layers on either side of the interface.
format	article
author	Kwangwook Park Kirstin Alberi
author_facet	Kwangwook Park Kirstin Alberi
author_sort	Kwangwook Park
title	Tailoring Heterovalent Interface Formation with Light
title_short	Tailoring Heterovalent Interface Formation with Light
title_full	Tailoring Heterovalent Interface Formation with Light
title_fullStr	Tailoring Heterovalent Interface Formation with Light
title_full_unstemmed	Tailoring Heterovalent Interface Formation with Light
title_sort	tailoring heterovalent interface formation with light
publisher	Nature Portfolio
publishDate	2017
url	https://doaj.org/article/ec21dcb3c8764520aebc7053cf8fb5d7
work_keys_str_mv	AT kwangwookpark tailoringheterovalentinterfaceformationwithlight AT kirstinalberi tailoringheterovalentinterfaceformationwithlight
_version_	1718395678010376192

Tailoring Heterovalent Interface Formation with Light

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