Tailoring Heterovalent Interface Formation with Light
Abstract Integrating different semiconductor materials into an epitaxial device structure offers additional degrees of freedom to select for optimal material properties in each layer. However, interfaces between materials with different valences (i.e. III-V, II-VI and IV semiconductors) can be diffi...
Guardado en:
Autores principales: | Kwangwook Park, Kirstin Alberi |
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Formato: | article |
Lenguaje: | EN |
Publicado: |
Nature Portfolio
2017
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Materias: | |
Acceso en línea: | https://doaj.org/article/ec21dcb3c8764520aebc7053cf8fb5d7 |
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