Tailoring Heterovalent Interface Formation with Light

Abstract Integrating different semiconductor materials into an epitaxial device structure offers additional degrees of freedom to select for optimal material properties in each layer. However, interfaces between materials with different valences (i.e. III-V, II-VI and IV semiconductors) can be diffi...

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Autores principales: Kwangwook Park, Kirstin Alberi
Formato: article
Lenguaje:EN
Publicado: Nature Portfolio 2017
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Acceso en línea:https://doaj.org/article/ec21dcb3c8764520aebc7053cf8fb5d7
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