Investigation of random telegraph signal in two junction layouts of proton irradiated CMOS SPADs

Abstract This paper focuses on the understanding of the Random Telegraph Signal (RTS) in Single-Photon Avalanche Diodes (SPAD). We studied the RTS of two different SPAD layouts, designed and implemented in a 150-nm CMOS process, after proton irradiation. The two structures are characterized by diffe...

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Autores principales:	F. Di Capua, M. Campajola, D. Fiore, L. Gasparini, E. Sarnelli, A. Aloisio
Formato:	article
Lenguaje:	EN
Publicado:	Nature Portfolio 2021
Materias:	Medicine R Science Q
Acceso en línea:	https://doaj.org/article/ec4e245a0e4f4d658edce38ceaaf5781
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spelling	oai:doaj.org-article:ec4e245a0e4f4d658edce38ceaaf57812021-12-02T16:45:06ZInvestigation of random telegraph signal in two junction layouts of proton irradiated CMOS SPADs10.1038/s41598-021-87962-w2045-2322https://doaj.org/article/ec4e245a0e4f4d658edce38ceaaf57812021-04-01T00:00:00Zhttps://doi.org/10.1038/s41598-021-87962-whttps://doaj.org/toc/2045-2322Abstract This paper focuses on the understanding of the Random Telegraph Signal (RTS) in Single-Photon Avalanche Diodes (SPAD). We studied the RTS of two different SPAD layouts, designed and implemented in a 150-nm CMOS process, after proton irradiation. The two structures are characterized by different junction types: the first structure is constituted by a P+/Nwell junction, while the second is formed by a Pwell/Niso junction. RTS occurrence has been measured in about one thousand SPAD pixels and the differences addressed in two layouts are motivated and discussed. Hypotheses on the RTS origin are drawn by analyzing the RTS time constants and the RTS occurrence evolution as a function of the annealing temperature.F. Di CapuaM. CampajolaD. FioreL. GaspariniE. SarnelliA. AloisioNature PortfolioarticleMedicineRScienceQENScientific Reports, Vol 11, Iss 1, Pp 1-12 (2021)
institution	DOAJ
collection	DOAJ
language	EN
topic	Medicine R Science Q
spellingShingle	Medicine R Science Q F. Di Capua M. Campajola D. Fiore L. Gasparini E. Sarnelli A. Aloisio Investigation of random telegraph signal in two junction layouts of proton irradiated CMOS SPADs
description	Abstract This paper focuses on the understanding of the Random Telegraph Signal (RTS) in Single-Photon Avalanche Diodes (SPAD). We studied the RTS of two different SPAD layouts, designed and implemented in a 150-nm CMOS process, after proton irradiation. The two structures are characterized by different junction types: the first structure is constituted by a P+/Nwell junction, while the second is formed by a Pwell/Niso junction. RTS occurrence has been measured in about one thousand SPAD pixels and the differences addressed in two layouts are motivated and discussed. Hypotheses on the RTS origin are drawn by analyzing the RTS time constants and the RTS occurrence evolution as a function of the annealing temperature.
format	article
author	F. Di Capua M. Campajola D. Fiore L. Gasparini E. Sarnelli A. Aloisio
author_facet	F. Di Capua M. Campajola D. Fiore L. Gasparini E. Sarnelli A. Aloisio
author_sort	F. Di Capua
title	Investigation of random telegraph signal in two junction layouts of proton irradiated CMOS SPADs
title_short	Investigation of random telegraph signal in two junction layouts of proton irradiated CMOS SPADs
title_full	Investigation of random telegraph signal in two junction layouts of proton irradiated CMOS SPADs
title_fullStr	Investigation of random telegraph signal in two junction layouts of proton irradiated CMOS SPADs
title_full_unstemmed	Investigation of random telegraph signal in two junction layouts of proton irradiated CMOS SPADs
title_sort	investigation of random telegraph signal in two junction layouts of proton irradiated cmos spads
publisher	Nature Portfolio
publishDate	2021
url	https://doaj.org/article/ec4e245a0e4f4d658edce38ceaaf5781
work_keys_str_mv	AT fdicapua investigationofrandomtelegraphsignalintwojunctionlayoutsofprotonirradiatedcmosspads AT mcampajola investigationofrandomtelegraphsignalintwojunctionlayoutsofprotonirradiatedcmosspads AT dfiore investigationofrandomtelegraphsignalintwojunctionlayoutsofprotonirradiatedcmosspads AT lgasparini investigationofrandomtelegraphsignalintwojunctionlayoutsofprotonirradiatedcmosspads AT esarnelli investigationofrandomtelegraphsignalintwojunctionlayoutsofprotonirradiatedcmosspads AT aaloisio investigationofrandomtelegraphsignalintwojunctionlayoutsofprotonirradiatedcmosspads
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Investigation of random telegraph signal in two junction layouts of proton irradiated CMOS SPADs

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