Investigation of random telegraph signal in two junction layouts of proton irradiated CMOS SPADs

Abstract This paper focuses on the understanding of the Random Telegraph Signal (RTS) in Single-Photon Avalanche Diodes (SPAD). We studied the RTS of two different SPAD layouts, designed and implemented in a 150-nm CMOS process, after proton irradiation. The two structures are characterized by diffe...

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Autores principales: F. Di Capua, M. Campajola, D. Fiore, L. Gasparini, E. Sarnelli, A. Aloisio
Formato: article
Lenguaje:EN
Publicado: Nature Portfolio 2021
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Acceso en línea:https://doaj.org/article/ec4e245a0e4f4d658edce38ceaaf5781
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