Moiré-related in-gap states in a twisted MoS2/graphite heterojunction
Heterointerfaces: Gap states in a twisted heterojunction New moiré-related states emerge in the bandgap of molybdenum disulfide when interfaced with highly oriented pyrolytic graphite. Two-dimensional materials enable designer heterostructures to be created layer-by-layer, but greater understanding...
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| Autores principales: | , , , , , , , |
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| Formato: | article |
| Lenguaje: | EN |
| Publicado: |
Nature Portfolio
2017
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| Materias: | |
| Acceso en línea: | https://doaj.org/article/ec6b9245455d4809b29a007a2f001ca1 |
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| Sumario: | Heterointerfaces: Gap states in a twisted heterojunction New moiré-related states emerge in the bandgap of molybdenum disulfide when interfaced with highly oriented pyrolytic graphite. Two-dimensional materials enable designer heterostructures to be created layer-by-layer, but greater understanding of how different interfaces affect the electronic structure is required if they are to be fully exploited for applications. An international team of researchers led by Minn-Tsong Lin from National Taiwan University use low-temperature scanning tunneling microscopy and spectroscopy to show that in-gap states can form at molybdenum disulfide/graphite heterointerfaces, which are sensitive to both the stacking angle and local strain, and have a small dependence on the moiré superstructure. These tunable in-gap states, which are attributed to interlayer charges, show the complexity, but also potential of using stacking and strain for engineering the electronic structure of heterostructures. |
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