Moiré-related in-gap states in a twisted MoS2/graphite heterojunction

Heterointerfaces: Gap states in a twisted heterojunction New moiré-related states emerge in the bandgap of molybdenum disulfide when interfaced with highly oriented pyrolytic graphite. Two-dimensional materials enable designer heterostructures to be created layer-by-layer, but greater understanding...

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Autores principales:	Chun-I Lu, Christopher J. Butler, Jing-Kai Huang, Yu-Hsun Chu, Hung-Hsiang Yang, Ching-Ming Wei, Lain-Jong Li, Minn-Tsong Lin
Formato:	article
Lenguaje:	EN
Publicado:	Nature Portfolio 2017
Materias:	Materials of engineering and construction. Mechanics of materials TA401-492 Chemistry QD1-999
Acceso en línea:	https://doaj.org/article/ec6b9245455d4809b29a007a2f001ca1
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spelling	oai:doaj.org-article:ec6b9245455d4809b29a007a2f001ca12021-12-02T16:05:44ZMoiré-related in-gap states in a twisted MoS2/graphite heterojunction10.1038/s41699-017-0030-62397-7132https://doaj.org/article/ec6b9245455d4809b29a007a2f001ca12017-07-01T00:00:00Zhttps://doi.org/10.1038/s41699-017-0030-6https://doaj.org/toc/2397-7132Heterointerfaces: Gap states in a twisted heterojunction New moiré-related states emerge in the bandgap of molybdenum disulfide when interfaced with highly oriented pyrolytic graphite. Two-dimensional materials enable designer heterostructures to be created layer-by-layer, but greater understanding of how different interfaces affect the electronic structure is required if they are to be fully exploited for applications. An international team of researchers led by Minn-Tsong Lin from National Taiwan University use low-temperature scanning tunneling microscopy and spectroscopy to show that in-gap states can form at molybdenum disulfide/graphite heterointerfaces, which are sensitive to both the stacking angle and local strain, and have a small dependence on the moiré superstructure. These tunable in-gap states, which are attributed to interlayer charges, show the complexity, but also potential of using stacking and strain for engineering the electronic structure of heterostructures.Chun-I LuChristopher J. ButlerJing-Kai HuangYu-Hsun ChuHung-Hsiang YangChing-Ming WeiLain-Jong LiMinn-Tsong LinNature PortfolioarticleMaterials of engineering and construction. Mechanics of materialsTA401-492ChemistryQD1-999ENnpj 2D Materials and Applications, Vol 1, Iss 1, Pp 1-6 (2017)
institution	DOAJ
collection	DOAJ
language	EN
topic	Materials of engineering and construction. Mechanics of materials TA401-492 Chemistry QD1-999
spellingShingle	Materials of engineering and construction. Mechanics of materials TA401-492 Chemistry QD1-999 Chun-I Lu Christopher J. Butler Jing-Kai Huang Yu-Hsun Chu Hung-Hsiang Yang Ching-Ming Wei Lain-Jong Li Minn-Tsong Lin Moiré-related in-gap states in a twisted MoS2/graphite heterojunction
description	Heterointerfaces: Gap states in a twisted heterojunction New moiré-related states emerge in the bandgap of molybdenum disulfide when interfaced with highly oriented pyrolytic graphite. Two-dimensional materials enable designer heterostructures to be created layer-by-layer, but greater understanding of how different interfaces affect the electronic structure is required if they are to be fully exploited for applications. An international team of researchers led by Minn-Tsong Lin from National Taiwan University use low-temperature scanning tunneling microscopy and spectroscopy to show that in-gap states can form at molybdenum disulfide/graphite heterointerfaces, which are sensitive to both the stacking angle and local strain, and have a small dependence on the moiré superstructure. These tunable in-gap states, which are attributed to interlayer charges, show the complexity, but also potential of using stacking and strain for engineering the electronic structure of heterostructures.
format	article
author	Chun-I Lu Christopher J. Butler Jing-Kai Huang Yu-Hsun Chu Hung-Hsiang Yang Ching-Ming Wei Lain-Jong Li Minn-Tsong Lin
author_facet	Chun-I Lu Christopher J. Butler Jing-Kai Huang Yu-Hsun Chu Hung-Hsiang Yang Ching-Ming Wei Lain-Jong Li Minn-Tsong Lin
author_sort	Chun-I Lu
title	Moiré-related in-gap states in a twisted MoS2/graphite heterojunction
title_short	Moiré-related in-gap states in a twisted MoS2/graphite heterojunction
title_full	Moiré-related in-gap states in a twisted MoS2/graphite heterojunction
title_fullStr	Moiré-related in-gap states in a twisted MoS2/graphite heterojunction
title_full_unstemmed	Moiré-related in-gap states in a twisted MoS2/graphite heterojunction
title_sort	moiré-related in-gap states in a twisted mos2/graphite heterojunction
publisher	Nature Portfolio
publishDate	2017
url	https://doaj.org/article/ec6b9245455d4809b29a007a2f001ca1
work_keys_str_mv	AT chunilu moirerelatedingapstatesinatwistedmos2graphiteheterojunction AT christopherjbutler moirerelatedingapstatesinatwistedmos2graphiteheterojunction AT jingkaihuang moirerelatedingapstatesinatwistedmos2graphiteheterojunction AT yuhsunchu moirerelatedingapstatesinatwistedmos2graphiteheterojunction AT hunghsiangyang moirerelatedingapstatesinatwistedmos2graphiteheterojunction AT chingmingwei moirerelatedingapstatesinatwistedmos2graphiteheterojunction AT lainjongli moirerelatedingapstatesinatwistedmos2graphiteheterojunction AT minntsonglin moirerelatedingapstatesinatwistedmos2graphiteheterojunction
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Moiré-related in-gap states in a twisted MoS2/graphite heterojunction

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