Underwater Optical Wireless Communications With InGaN LEDs Grown With an Asymmetric Multiple Quantum Well for Light Emission or Detection

InGaN light-emitting diodes (LEDs) grown with an asymmetric multiple quantum well (MQW) are proposed for use in an optical link with an avalanche photodiode (APD) based receiver. In contrast to the high photoresponse of red AlGaInP LEDs in APDs, the proposed blue LEDs provide improved light output a...

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Autores principales:	Chia-Lung Tsai, Tong-Wen Wang, Ying-Chang Li, Atanu Das, Chia-Wei Chen, Yen-Jen Chen, Sun-Chien Ko
Formato:	article
Lenguaje:	EN
Publicado:	IEEE 2022
Materias:	InGaN light-emitting diodes asymmetric multiple quantum well photodiode optical wireless communications Applied optics. Photonics TA1501-1820 Optics. Light QC350-467
Acceso en línea:	https://doaj.org/article/ece2c90d77a147ef836ba475be0904cf
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spelling	oai:doaj.org-article:ece2c90d77a147ef836ba475be0904cf2021-12-03T00:00:05ZUnderwater Optical Wireless Communications With InGaN LEDs Grown With an Asymmetric Multiple Quantum Well for Light Emission or Detection1943-065510.1109/JPHOT.2021.3130133https://doaj.org/article/ece2c90d77a147ef836ba475be0904cf2022-01-01T00:00:00Zhttps://ieeexplore.ieee.org/document/9625845/https://doaj.org/toc/1943-0655InGaN light-emitting diodes (LEDs) grown with an asymmetric multiple quantum well (MQW) are proposed for use in an optical link with an avalanche photodiode (APD) based receiver. In contrast to the high photoresponse of red AlGaInP LEDs in APDs, the proposed blue LEDs provide improved light output and enhanced system bandwidth for directed line-of-sight optical links passing through a 100-cm-long water tank. This improvement is due to the nonuniform carrier distribution within the InGaN MQWs being mitigated by using a thin GaN barrier near the n-GaN to facilitate hole transport capacity. In addition, bandwidth degradation resulting from APD module saturation can also be avoided by using these blue LEDs, successfully establishing a 300 Mbit/s LED-based underwater data link. The proposed InGaN LEDs (zero bias) under illumination exhibit a peak responsivity of 0.133 at λ = 370 nm, an ultraviolet (UV)-to-visible rejection ratio of 4849 and a 3-dB cut-off frequency of 33.3 MHz. Using violet UV laser diodes and the proposed LEDs respectively as the optical transmitter and receiver, an underwater optical link (L = 100 cm) with a data transmission rate of up to 130 Mbit/s and a bit error rate of 4.2 × 10<sup>−9</sup> is also demonstrated.Chia-Lung TsaiTong-Wen WangYing-Chang LiAtanu DasChia-Wei ChenYen-Jen ChenSun-Chien KoIEEEarticleInGaNlight-emitting diodesasymmetric multiple quantum wellphotodiodeoptical wireless communicationsApplied optics. PhotonicsTA1501-1820Optics. LightQC350-467ENIEEE Photonics Journal, Vol 14, Iss 1, Pp 1-7 (2022)
institution	DOAJ
collection	DOAJ
language	EN
topic	InGaN light-emitting diodes asymmetric multiple quantum well photodiode optical wireless communications Applied optics. Photonics TA1501-1820 Optics. Light QC350-467
spellingShingle	InGaN light-emitting diodes asymmetric multiple quantum well photodiode optical wireless communications Applied optics. Photonics TA1501-1820 Optics. Light QC350-467 Chia-Lung Tsai Tong-Wen Wang Ying-Chang Li Atanu Das Chia-Wei Chen Yen-Jen Chen Sun-Chien Ko Underwater Optical Wireless Communications With InGaN LEDs Grown With an Asymmetric Multiple Quantum Well for Light Emission or Detection
description	InGaN light-emitting diodes (LEDs) grown with an asymmetric multiple quantum well (MQW) are proposed for use in an optical link with an avalanche photodiode (APD) based receiver. In contrast to the high photoresponse of red AlGaInP LEDs in APDs, the proposed blue LEDs provide improved light output and enhanced system bandwidth for directed line-of-sight optical links passing through a 100-cm-long water tank. This improvement is due to the nonuniform carrier distribution within the InGaN MQWs being mitigated by using a thin GaN barrier near the n-GaN to facilitate hole transport capacity. In addition, bandwidth degradation resulting from APD module saturation can also be avoided by using these blue LEDs, successfully establishing a 300 Mbit/s LED-based underwater data link. The proposed InGaN LEDs (zero bias) under illumination exhibit a peak responsivity of 0.133 at λ = 370 nm, an ultraviolet (UV)-to-visible rejection ratio of 4849 and a 3-dB cut-off frequency of 33.3 MHz. Using violet UV laser diodes and the proposed LEDs respectively as the optical transmitter and receiver, an underwater optical link (L = 100 cm) with a data transmission rate of up to 130 Mbit/s and a bit error rate of 4.2 × 10<sup>−9</sup> is also demonstrated.
format	article
author	Chia-Lung Tsai Tong-Wen Wang Ying-Chang Li Atanu Das Chia-Wei Chen Yen-Jen Chen Sun-Chien Ko
author_facet	Chia-Lung Tsai Tong-Wen Wang Ying-Chang Li Atanu Das Chia-Wei Chen Yen-Jen Chen Sun-Chien Ko
author_sort	Chia-Lung Tsai
title	Underwater Optical Wireless Communications With InGaN LEDs Grown With an Asymmetric Multiple Quantum Well for Light Emission or Detection
title_short	Underwater Optical Wireless Communications With InGaN LEDs Grown With an Asymmetric Multiple Quantum Well for Light Emission or Detection
title_full	Underwater Optical Wireless Communications With InGaN LEDs Grown With an Asymmetric Multiple Quantum Well for Light Emission or Detection
title_fullStr	Underwater Optical Wireless Communications With InGaN LEDs Grown With an Asymmetric Multiple Quantum Well for Light Emission or Detection
title_full_unstemmed	Underwater Optical Wireless Communications With InGaN LEDs Grown With an Asymmetric Multiple Quantum Well for Light Emission or Detection
title_sort	underwater optical wireless communications with ingan leds grown with an asymmetric multiple quantum well for light emission or detection
publisher	IEEE
publishDate	2022
url	https://doaj.org/article/ece2c90d77a147ef836ba475be0904cf
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Underwater Optical Wireless Communications With InGaN LEDs Grown With an Asymmetric Multiple Quantum Well for Light Emission or Detection

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