Electric field control of magnetization direction across the antiferromagnetic to ferromagnetic transition

Abstract Electric-field-induced magnetic switching can lead to a new paradigm of ultra-low power nonvolatile magnetoelectric random access memory (MeRAM). To date the realization of MeRAM relies primarily on ferromagnetic (FM) based heterostructures which exhibit low voltage-controlled magnetic anis...

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Autores principales:	Guohui Zheng, San-Huang Ke, Maosheng Miao, Jinwoong Kim, R. Ramesh, Nicholas Kioussis
Formato:	article
Lenguaje:	EN
Publicado:	Nature Portfolio 2017
Materias:	Medicine R Science Q
Acceso en línea:	https://doaj.org/article/ecf46934afbf4797a225758321e4167b
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spelling	oai:doaj.org-article:ecf46934afbf4797a225758321e4167b2021-12-02T15:05:29ZElectric field control of magnetization direction across the antiferromagnetic to ferromagnetic transition10.1038/s41598-017-05611-72045-2322https://doaj.org/article/ecf46934afbf4797a225758321e4167b2017-07-01T00:00:00Zhttps://doi.org/10.1038/s41598-017-05611-7https://doaj.org/toc/2045-2322Abstract Electric-field-induced magnetic switching can lead to a new paradigm of ultra-low power nonvolatile magnetoelectric random access memory (MeRAM). To date the realization of MeRAM relies primarily on ferromagnetic (FM) based heterostructures which exhibit low voltage-controlled magnetic anisotropy (VCMA) efficiency. On the other hand, manipulation of magnetism in antiferromagnetic (AFM) based nanojunctions by purely electric field means (rather than E-field induced strain) remains unexplored thus far. Ab initio electronic structure calculations reveal that the VCMA of ultrathin FeRh/MgO bilayers exhibits distinct linear or nonlinear behavior across the AFM to FM metamagnetic transition depending on the Fe- or Rh-interface termination. We predict that the AFM Fe-terminated phase undergoes an E-field magnetization switching with large VCMA efficiency and a spin reorientation across the metamagnetic transition. In sharp contrast, while the Rh-terminated interface exhibits large out-of-plane (in-plane) MA in the FM (AFM) phase, its magnetization is more rigid to external E-field. These findings demonstrate that manipulation of the AFM Néel-order magnetization direction via purely E-field means can pave the way toward ultra-low energy AFM-based MeRAM devices.Guohui ZhengSan-Huang KeMaosheng MiaoJinwoong KimR. RameshNicholas KioussisNature PortfolioarticleMedicineRScienceQENScientific Reports, Vol 7, Iss 1, Pp 1-9 (2017)
institution	DOAJ
collection	DOAJ
language	EN
topic	Medicine R Science Q
spellingShingle	Medicine R Science Q Guohui Zheng San-Huang Ke Maosheng Miao Jinwoong Kim R. Ramesh Nicholas Kioussis Electric field control of magnetization direction across the antiferromagnetic to ferromagnetic transition
description	Abstract Electric-field-induced magnetic switching can lead to a new paradigm of ultra-low power nonvolatile magnetoelectric random access memory (MeRAM). To date the realization of MeRAM relies primarily on ferromagnetic (FM) based heterostructures which exhibit low voltage-controlled magnetic anisotropy (VCMA) efficiency. On the other hand, manipulation of magnetism in antiferromagnetic (AFM) based nanojunctions by purely electric field means (rather than E-field induced strain) remains unexplored thus far. Ab initio electronic structure calculations reveal that the VCMA of ultrathin FeRh/MgO bilayers exhibits distinct linear or nonlinear behavior across the AFM to FM metamagnetic transition depending on the Fe- or Rh-interface termination. We predict that the AFM Fe-terminated phase undergoes an E-field magnetization switching with large VCMA efficiency and a spin reorientation across the metamagnetic transition. In sharp contrast, while the Rh-terminated interface exhibits large out-of-plane (in-plane) MA in the FM (AFM) phase, its magnetization is more rigid to external E-field. These findings demonstrate that manipulation of the AFM Néel-order magnetization direction via purely E-field means can pave the way toward ultra-low energy AFM-based MeRAM devices.
format	article
author	Guohui Zheng San-Huang Ke Maosheng Miao Jinwoong Kim R. Ramesh Nicholas Kioussis
author_facet	Guohui Zheng San-Huang Ke Maosheng Miao Jinwoong Kim R. Ramesh Nicholas Kioussis
author_sort	Guohui Zheng
title	Electric field control of magnetization direction across the antiferromagnetic to ferromagnetic transition
title_short	Electric field control of magnetization direction across the antiferromagnetic to ferromagnetic transition
title_full	Electric field control of magnetization direction across the antiferromagnetic to ferromagnetic transition
title_fullStr	Electric field control of magnetization direction across the antiferromagnetic to ferromagnetic transition
title_full_unstemmed	Electric field control of magnetization direction across the antiferromagnetic to ferromagnetic transition
title_sort	electric field control of magnetization direction across the antiferromagnetic to ferromagnetic transition
publisher	Nature Portfolio
publishDate	2017
url	https://doaj.org/article/ecf46934afbf4797a225758321e4167b
work_keys_str_mv	AT guohuizheng electricfieldcontrolofmagnetizationdirectionacrosstheantiferromagnetictoferromagnetictransition AT sanhuangke electricfieldcontrolofmagnetizationdirectionacrosstheantiferromagnetictoferromagnetictransition AT maoshengmiao electricfieldcontrolofmagnetizationdirectionacrosstheantiferromagnetictoferromagnetictransition AT jinwoongkim electricfieldcontrolofmagnetizationdirectionacrosstheantiferromagnetictoferromagnetictransition AT rramesh electricfieldcontrolofmagnetizationdirectionacrosstheantiferromagnetictoferromagnetictransition AT nicholaskioussis electricfieldcontrolofmagnetizationdirectionacrosstheantiferromagnetictoferromagnetictransition
_version_	1718388865296760832

Electric field control of magnetization direction across the antiferromagnetic to ferromagnetic transition

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