Characterization of Structural Defects in (Cd,Zn)Te Crystals Grown by the Travelling Heater Method

Structural defects and compositional uniformity remain the major problems affecting the performance of (Cd, Zn)Te (CZT) based detector devices. Understanding the mechanism of growth and defect formation is therefore fundamental to improving the crystal quality. In this frame, space experiments for t...

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Autores principales:	Jiaona Zou, Alex Fauler, Alexander S. Senchenkov, Nikolai N. Kolesnikov, Lutz Kirste, Merve Pinar. Kabukcuoglu, Elias Hamann, Angelica Cecilia, Michael Fiederle
Formato:	article
Lenguaje:	EN
Publicado:	MDPI AG 2021
Materias:	CZT THM structural defects homogeneity resistivity birefringence Crystallography QD901-999
Acceso en línea:	https://doaj.org/article/ed74b1005e034de89ad0a440b64623cf
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spelling	oai:doaj.org-article:ed74b1005e034de89ad0a440b64623cf2021-11-25T17:19:24ZCharacterization of Structural Defects in (Cd,Zn)Te Crystals Grown by the Travelling Heater Method10.3390/cryst111114022073-4352https://doaj.org/article/ed74b1005e034de89ad0a440b64623cf2021-11-01T00:00:00Zhttps://www.mdpi.com/2073-4352/11/11/1402https://doaj.org/toc/2073-4352Structural defects and compositional uniformity remain the major problems affecting the performance of (Cd, Zn)Te (CZT) based detector devices. Understanding the mechanism of growth and defect formation is therefore fundamental to improving the crystal quality. In this frame, space experiments for the growth of CZT by the Travelling Heater Method (THM) under microgravity are scheduled. A detailed ground-based program was performed to determine experimental parameters and three CZT crystals were grown by the THM. The structural defects, compositional homogeneity and resistivity of these ground-based crystals were investigated. A ZnTe content variation was observed at the growth interface and a high degree of stress associated with extensive dislocation networks was induced, which propagated into the grown crystal region according to the birefringence and X-ray White Beam Topography (XWBT) results. By adjusting the growth parameters, the ZnTe variations and the resulting stress were efficiently reduced. In addition, it was revealed that large inclusions and grain boundaries can generate a high degree of stress, leading to the formation of dislocation slip bands and subgrain boundaries. The dominant defects, including grain boundaries, dislocation networks and cracks in the interior of crystals, led to the resistivity variation in the crystals. The bulk resistivity of the as-grown crystals ranged from 10<sup>9</sup> Ωcm to 10<sup>10</sup> Ωcm.Jiaona ZouAlex FaulerAlexander S. SenchenkovNikolai N. KolesnikovLutz KirsteMerve Pinar. KabukcuogluElias HamannAngelica CeciliaMichael FiederleMDPI AGarticleCZTTHMstructural defectshomogeneityresistivitybirefringenceCrystallographyQD901-999ENCrystals, Vol 11, Iss 1402, p 1402 (2021)
institution	DOAJ
collection	DOAJ
language	EN
topic	CZT THM structural defects homogeneity resistivity birefringence Crystallography QD901-999
spellingShingle	CZT THM structural defects homogeneity resistivity birefringence Crystallography QD901-999 Jiaona Zou Alex Fauler Alexander S. Senchenkov Nikolai N. Kolesnikov Lutz Kirste Merve Pinar. Kabukcuoglu Elias Hamann Angelica Cecilia Michael Fiederle Characterization of Structural Defects in (Cd,Zn)Te Crystals Grown by the Travelling Heater Method
description	Structural defects and compositional uniformity remain the major problems affecting the performance of (Cd, Zn)Te (CZT) based detector devices. Understanding the mechanism of growth and defect formation is therefore fundamental to improving the crystal quality. In this frame, space experiments for the growth of CZT by the Travelling Heater Method (THM) under microgravity are scheduled. A detailed ground-based program was performed to determine experimental parameters and three CZT crystals were grown by the THM. The structural defects, compositional homogeneity and resistivity of these ground-based crystals were investigated. A ZnTe content variation was observed at the growth interface and a high degree of stress associated with extensive dislocation networks was induced, which propagated into the grown crystal region according to the birefringence and X-ray White Beam Topography (XWBT) results. By adjusting the growth parameters, the ZnTe variations and the resulting stress were efficiently reduced. In addition, it was revealed that large inclusions and grain boundaries can generate a high degree of stress, leading to the formation of dislocation slip bands and subgrain boundaries. The dominant defects, including grain boundaries, dislocation networks and cracks in the interior of crystals, led to the resistivity variation in the crystals. The bulk resistivity of the as-grown crystals ranged from 10<sup>9</sup> Ωcm to 10<sup>10</sup> Ωcm.
format	article
author	Jiaona Zou Alex Fauler Alexander S. Senchenkov Nikolai N. Kolesnikov Lutz Kirste Merve Pinar. Kabukcuoglu Elias Hamann Angelica Cecilia Michael Fiederle
author_facet	Jiaona Zou Alex Fauler Alexander S. Senchenkov Nikolai N. Kolesnikov Lutz Kirste Merve Pinar. Kabukcuoglu Elias Hamann Angelica Cecilia Michael Fiederle
author_sort	Jiaona Zou
title	Characterization of Structural Defects in (Cd,Zn)Te Crystals Grown by the Travelling Heater Method
title_short	Characterization of Structural Defects in (Cd,Zn)Te Crystals Grown by the Travelling Heater Method
title_full	Characterization of Structural Defects in (Cd,Zn)Te Crystals Grown by the Travelling Heater Method
title_fullStr	Characterization of Structural Defects in (Cd,Zn)Te Crystals Grown by the Travelling Heater Method
title_full_unstemmed	Characterization of Structural Defects in (Cd,Zn)Te Crystals Grown by the Travelling Heater Method
title_sort	characterization of structural defects in (cd,zn)te crystals grown by the travelling heater method
publisher	MDPI AG
publishDate	2021
url	https://doaj.org/article/ed74b1005e034de89ad0a440b64623cf
work_keys_str_mv	AT jiaonazou characterizationofstructuraldefectsincdzntecrystalsgrownbythetravellingheatermethod AT alexfauler characterizationofstructuraldefectsincdzntecrystalsgrownbythetravellingheatermethod AT alexanderssenchenkov characterizationofstructuraldefectsincdzntecrystalsgrownbythetravellingheatermethod AT nikolainkolesnikov characterizationofstructuraldefectsincdzntecrystalsgrownbythetravellingheatermethod AT lutzkirste characterizationofstructuraldefectsincdzntecrystalsgrownbythetravellingheatermethod AT mervepinarkabukcuoglu characterizationofstructuraldefectsincdzntecrystalsgrownbythetravellingheatermethod AT eliashamann characterizationofstructuraldefectsincdzntecrystalsgrownbythetravellingheatermethod AT angelicacecilia characterizationofstructuraldefectsincdzntecrystalsgrownbythetravellingheatermethod AT michaelfiederle characterizationofstructuraldefectsincdzntecrystalsgrownbythetravellingheatermethod
_version_	1718412504552439808

Characterization of Structural Defects in (Cd,Zn)Te Crystals Grown by the Travelling Heater Method

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