Short-wave infrared organic phototransistors with strong infrared-absorbing polytriarylamine by electron-transfer doping

Abstract Short-wavelength infrared (SWIR) sensors have attracted keen attention due to the increasing necessity in a variety of scientific and industrial applications, including biomedical and information technology fields. Because conventional SWIR sensors are made of inorganic materials with rigid...

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Autores principales:	Chulyeon Lee, Hwajeong Kim, Youngkyoo Kim
Formato:	article
Lenguaje:	EN
Publicado:	Nature Portfolio 2021
Materias:	Electronics TK7800-8360 Materials of engineering and construction. Mechanics of materials TA401-492
Acceso en línea:	https://doaj.org/article/eda7f0a2f2804357b8356c0e322b5abf
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spelling	oai:doaj.org-article:eda7f0a2f2804357b8356c0e322b5abf2021-12-02T14:25:20ZShort-wave infrared organic phototransistors with strong infrared-absorbing polytriarylamine by electron-transfer doping10.1038/s41528-021-00105-z2397-4621https://doaj.org/article/eda7f0a2f2804357b8356c0e322b5abf2021-04-01T00:00:00Zhttps://doi.org/10.1038/s41528-021-00105-zhttps://doaj.org/toc/2397-4621Abstract Short-wavelength infrared (SWIR) sensors have attracted keen attention due to the increasing necessity in a variety of scientific and industrial applications, including biomedical and information technology fields. Because conventional SWIR sensors are made of inorganic materials with rigid and brittle characteristics, organic materials with a discrete SWIR absorption are required for flexible SWIR sensors in the flexible electronics era. Here, we demonstrate that a polytriarylamine, poly[N,N′-bis(4-butylphenyl)-N,N′-bis(phenyl)benzidine] (PolyTPD), can absorb almost full range of SWIR wavelength (λ = 1000–3200 nm) after 48 h doping with tris(pentafluorophenyl)borane (BCF). The spectroscopic characterization disclosed that an electron transfer from PolyTPD to BCF created a new low energy level (gap) state leading to the SWIR absorption in the BCF-doped PolyTPD complexes. Organic phototransistors (OPTRs) with the BCF-doped PolyTPD films as a gate-sensing layer could detect the SWIR light with a reasonable photoresponsivity of ~538 mA W−1 (λ = 1500 nm), ~541 mA W−1 (λ = 2000 nm), and ~222 mA W−1 (λ = 3000 nm). The present breakthrough SWIR-OPTR technology can pave a way for further advances in SWIR-absorbing organic materials and flexible SWIR sensors.Chulyeon LeeHwajeong KimYoungkyoo KimNature PortfolioarticleElectronicsTK7800-8360Materials of engineering and construction. Mechanics of materialsTA401-492ENnpj Flexible Electronics, Vol 5, Iss 1, Pp 1-9 (2021)
institution	DOAJ
collection	DOAJ
language	EN
topic	Electronics TK7800-8360 Materials of engineering and construction. Mechanics of materials TA401-492
spellingShingle	Electronics TK7800-8360 Materials of engineering and construction. Mechanics of materials TA401-492 Chulyeon Lee Hwajeong Kim Youngkyoo Kim Short-wave infrared organic phototransistors with strong infrared-absorbing polytriarylamine by electron-transfer doping
description	Abstract Short-wavelength infrared (SWIR) sensors have attracted keen attention due to the increasing necessity in a variety of scientific and industrial applications, including biomedical and information technology fields. Because conventional SWIR sensors are made of inorganic materials with rigid and brittle characteristics, organic materials with a discrete SWIR absorption are required for flexible SWIR sensors in the flexible electronics era. Here, we demonstrate that a polytriarylamine, poly[N,N′-bis(4-butylphenyl)-N,N′-bis(phenyl)benzidine] (PolyTPD), can absorb almost full range of SWIR wavelength (λ = 1000–3200 nm) after 48 h doping with tris(pentafluorophenyl)borane (BCF). The spectroscopic characterization disclosed that an electron transfer from PolyTPD to BCF created a new low energy level (gap) state leading to the SWIR absorption in the BCF-doped PolyTPD complexes. Organic phototransistors (OPTRs) with the BCF-doped PolyTPD films as a gate-sensing layer could detect the SWIR light with a reasonable photoresponsivity of ~538 mA W−1 (λ = 1500 nm), ~541 mA W−1 (λ = 2000 nm), and ~222 mA W−1 (λ = 3000 nm). The present breakthrough SWIR-OPTR technology can pave a way for further advances in SWIR-absorbing organic materials and flexible SWIR sensors.
format	article
author	Chulyeon Lee Hwajeong Kim Youngkyoo Kim
author_facet	Chulyeon Lee Hwajeong Kim Youngkyoo Kim
author_sort	Chulyeon Lee
title	Short-wave infrared organic phototransistors with strong infrared-absorbing polytriarylamine by electron-transfer doping
title_short	Short-wave infrared organic phototransistors with strong infrared-absorbing polytriarylamine by electron-transfer doping
title_full	Short-wave infrared organic phototransistors with strong infrared-absorbing polytriarylamine by electron-transfer doping
title_fullStr	Short-wave infrared organic phototransistors with strong infrared-absorbing polytriarylamine by electron-transfer doping
title_full_unstemmed	Short-wave infrared organic phototransistors with strong infrared-absorbing polytriarylamine by electron-transfer doping
title_sort	short-wave infrared organic phototransistors with strong infrared-absorbing polytriarylamine by electron-transfer doping
publisher	Nature Portfolio
publishDate	2021
url	https://doaj.org/article/eda7f0a2f2804357b8356c0e322b5abf
work_keys_str_mv	AT chulyeonlee shortwaveinfraredorganicphototransistorswithstronginfraredabsorbingpolytriarylaminebyelectrontransferdoping AT hwajeongkim shortwaveinfraredorganicphototransistorswithstronginfraredabsorbingpolytriarylaminebyelectrontransferdoping AT youngkyookim shortwaveinfraredorganicphototransistorswithstronginfraredabsorbingpolytriarylaminebyelectrontransferdoping
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Short-wave infrared organic phototransistors with strong infrared-absorbing polytriarylamine by electron-transfer doping

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