Strain Compensation and Trade-Off Design Result in Exciton Emission at 306 nm from AlGaN LEDs at Temperatures up to 368 K

In this study, we suppressed the parasitic emission caused by electron overflow found in typical ultraviolet B (UVB) and ultraviolet C (UVC) light-emitting diodes (LEDs). The modulation of the p-layer structure and aluminum composition as well as a trade-off in the structure to ensure strain compens...

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Autores principales:	Shih-Ming Huang, Mu-Jen Lai, Rui-Sen Liu, Tsung-Yen Liu, Ray-Ming Lin
Formato:	article
Lenguaje:	EN
Publicado:	MDPI AG 2021
Materias:	AlGaN ultraviolet light emitting diodes exciton emission MOCVD Technology T Electrical engineering. Electronics. Nuclear engineering TK1-9971 Engineering (General). Civil engineering (General) TA1-2040 Microscopy QH201-278.5 Descriptive and experimental mechanics QC120-168.85
Acceso en línea:	https://doaj.org/article/edf7f349a13e48ba99fb43ad0715f11f
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spelling	oai:doaj.org-article:edf7f349a13e48ba99fb43ad0715f11f2021-11-11T18:11:55ZStrain Compensation and Trade-Off Design Result in Exciton Emission at 306 nm from AlGaN LEDs at Temperatures up to 368 K10.3390/ma142166991996-1944https://doaj.org/article/edf7f349a13e48ba99fb43ad0715f11f2021-11-01T00:00:00Zhttps://www.mdpi.com/1996-1944/14/21/6699https://doaj.org/toc/1996-1944In this study, we suppressed the parasitic emission caused by electron overflow found in typical ultraviolet B (UVB) and ultraviolet C (UVC) light-emitting diodes (LEDs). The modulation of the p-layer structure and aluminum composition as well as a trade-off in the structure to ensure strain compensation allowed us to increase the p-AlGaN doping efficiency and hole numbers in the p-neutral region. This approach led to greater matching of the electron and hole numbers in the UVB and UVC emission quantum wells. Our UVB LED (sample A) exhibited clear exciton emission, with its peak near 306 nm, and a band-to-band emission at 303 nm. The relative intensity of the exciton emission of sample A decreased as a result of the thermal energy effect of the temperature increase. Nevertheless, sample A displayed its exciton emission at temperatures of up to 368 K. In contrast, our corresponding UVC LED (sample B) only exhibited a Gaussian peak emission at a wavelength of approximately 272 nm.Shih-Ming HuangMu-Jen LaiRui-Sen LiuTsung-Yen LiuRay-Ming LinMDPI AGarticleAlGaNultravioletlight emitting diodesexciton emissionMOCVDTechnologyTElectrical engineering. Electronics. Nuclear engineeringTK1-9971Engineering (General). Civil engineering (General)TA1-2040MicroscopyQH201-278.5Descriptive and experimental mechanicsQC120-168.85ENMaterials, Vol 14, Iss 6699, p 6699 (2021)
institution	DOAJ
collection	DOAJ
language	EN
topic	AlGaN ultraviolet light emitting diodes exciton emission MOCVD Technology T Electrical engineering. Electronics. Nuclear engineering TK1-9971 Engineering (General). Civil engineering (General) TA1-2040 Microscopy QH201-278.5 Descriptive and experimental mechanics QC120-168.85
spellingShingle	AlGaN ultraviolet light emitting diodes exciton emission MOCVD Technology T Electrical engineering. Electronics. Nuclear engineering TK1-9971 Engineering (General). Civil engineering (General) TA1-2040 Microscopy QH201-278.5 Descriptive and experimental mechanics QC120-168.85 Shih-Ming Huang Mu-Jen Lai Rui-Sen Liu Tsung-Yen Liu Ray-Ming Lin Strain Compensation and Trade-Off Design Result in Exciton Emission at 306 nm from AlGaN LEDs at Temperatures up to 368 K
description	In this study, we suppressed the parasitic emission caused by electron overflow found in typical ultraviolet B (UVB) and ultraviolet C (UVC) light-emitting diodes (LEDs). The modulation of the p-layer structure and aluminum composition as well as a trade-off in the structure to ensure strain compensation allowed us to increase the p-AlGaN doping efficiency and hole numbers in the p-neutral region. This approach led to greater matching of the electron and hole numbers in the UVB and UVC emission quantum wells. Our UVB LED (sample A) exhibited clear exciton emission, with its peak near 306 nm, and a band-to-band emission at 303 nm. The relative intensity of the exciton emission of sample A decreased as a result of the thermal energy effect of the temperature increase. Nevertheless, sample A displayed its exciton emission at temperatures of up to 368 K. In contrast, our corresponding UVC LED (sample B) only exhibited a Gaussian peak emission at a wavelength of approximately 272 nm.
format	article
author	Shih-Ming Huang Mu-Jen Lai Rui-Sen Liu Tsung-Yen Liu Ray-Ming Lin
author_facet	Shih-Ming Huang Mu-Jen Lai Rui-Sen Liu Tsung-Yen Liu Ray-Ming Lin
author_sort	Shih-Ming Huang
title	Strain Compensation and Trade-Off Design Result in Exciton Emission at 306 nm from AlGaN LEDs at Temperatures up to 368 K
title_short	Strain Compensation and Trade-Off Design Result in Exciton Emission at 306 nm from AlGaN LEDs at Temperatures up to 368 K
title_full	Strain Compensation and Trade-Off Design Result in Exciton Emission at 306 nm from AlGaN LEDs at Temperatures up to 368 K
title_fullStr	Strain Compensation and Trade-Off Design Result in Exciton Emission at 306 nm from AlGaN LEDs at Temperatures up to 368 K
title_full_unstemmed	Strain Compensation and Trade-Off Design Result in Exciton Emission at 306 nm from AlGaN LEDs at Temperatures up to 368 K
title_sort	strain compensation and trade-off design result in exciton emission at 306 nm from algan leds at temperatures up to 368 k
publisher	MDPI AG
publishDate	2021
url	https://doaj.org/article/edf7f349a13e48ba99fb43ad0715f11f
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Strain Compensation and Trade-Off Design Result in Exciton Emission at 306 nm from AlGaN LEDs at Temperatures up to 368 K

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