Design and fabrication of wafer-scale highly uniform silicon nanowire arrays by metal-assisted chemical etching for antireflection films

We present a novel and facile scheme for fabricating wafer-scale arrays of highly uniform vertically aligned silicon nanowires (Si-NWs) in the diameter range of 50 to 200 nm. The key idea is to fabricate thin gold (Au) nanostructures using magnetron sputtering followed by de-wetting of Au and subseq...

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Autores principales:	Chuhao Yao, Yue Zhao, Xiaomeng Zhang, Hailiang Li, Changqing Xie
Formato:	article
Lenguaje:	EN
Publicado:	Elsevier 2021
Materias:	Silicon nanowires Maskless method Exciton generation rate Metal-assisted chemical etching Antireflection film Physics QC1-999
Acceso en línea:	https://doaj.org/article/ee137de234cf4e6bb01bd7701c023637
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spelling	oai:doaj.org-article:ee137de234cf4e6bb01bd7701c0236372021-11-18T04:48:18ZDesign and fabrication of wafer-scale highly uniform silicon nanowire arrays by metal-assisted chemical etching for antireflection films2211-379710.1016/j.rinp.2021.105018https://doaj.org/article/ee137de234cf4e6bb01bd7701c0236372021-12-01T00:00:00Zhttp://www.sciencedirect.com/science/article/pii/S2211379721010160https://doaj.org/toc/2211-3797We present a novel and facile scheme for fabricating wafer-scale arrays of highly uniform vertically aligned silicon nanowires (Si-NWs) in the diameter range of 50 to 200 nm. The key idea is to fabricate thin gold (Au) nanostructures using magnetron sputtering followed by de-wetting of Au and subsequent realization of wafer-scale and highly uniform Si-NWs arrays by metal-assisted chemical etching in low temperature (2 °C) without resorting to complex photolithography. The excellent properties of these Si-NWs arrays were also demonstrated numerically. A maximum exciton generation rate of 1.76 × 1024 and a maximum energy generation rate of 28 can be obtained from Si-NWs arrays with the diameter of 200 nm. The reflectivity of the Si-NWs arrays is declined with decreasing annealing temperature and is below 10% over a wide wavelength range at the annealing temperature of 200 °C. Our work provides a promising approach for constructing Si-NWs arrays with good photoelectric conversion performance.Chuhao YaoYue ZhaoXiaomeng ZhangHailiang LiChangqing XieElsevierarticleSilicon nanowiresMaskless methodExciton generation rateMetal-assisted chemical etchingAntireflection filmPhysicsQC1-999ENResults in Physics, Vol 31, Iss , Pp 105018- (2021)
institution	DOAJ
collection	DOAJ
language	EN
topic	Silicon nanowires Maskless method Exciton generation rate Metal-assisted chemical etching Antireflection film Physics QC1-999
spellingShingle	Silicon nanowires Maskless method Exciton generation rate Metal-assisted chemical etching Antireflection film Physics QC1-999 Chuhao Yao Yue Zhao Xiaomeng Zhang Hailiang Li Changqing Xie Design and fabrication of wafer-scale highly uniform silicon nanowire arrays by metal-assisted chemical etching for antireflection films
description	We present a novel and facile scheme for fabricating wafer-scale arrays of highly uniform vertically aligned silicon nanowires (Si-NWs) in the diameter range of 50 to 200 nm. The key idea is to fabricate thin gold (Au) nanostructures using magnetron sputtering followed by de-wetting of Au and subsequent realization of wafer-scale and highly uniform Si-NWs arrays by metal-assisted chemical etching in low temperature (2 °C) without resorting to complex photolithography. The excellent properties of these Si-NWs arrays were also demonstrated numerically. A maximum exciton generation rate of 1.76 × 1024 and a maximum energy generation rate of 28 can be obtained from Si-NWs arrays with the diameter of 200 nm. The reflectivity of the Si-NWs arrays is declined with decreasing annealing temperature and is below 10% over a wide wavelength range at the annealing temperature of 200 °C. Our work provides a promising approach for constructing Si-NWs arrays with good photoelectric conversion performance.
format	article
author	Chuhao Yao Yue Zhao Xiaomeng Zhang Hailiang Li Changqing Xie
author_facet	Chuhao Yao Yue Zhao Xiaomeng Zhang Hailiang Li Changqing Xie
author_sort	Chuhao Yao
title	Design and fabrication of wafer-scale highly uniform silicon nanowire arrays by metal-assisted chemical etching for antireflection films
title_short	Design and fabrication of wafer-scale highly uniform silicon nanowire arrays by metal-assisted chemical etching for antireflection films
title_full	Design and fabrication of wafer-scale highly uniform silicon nanowire arrays by metal-assisted chemical etching for antireflection films
title_fullStr	Design and fabrication of wafer-scale highly uniform silicon nanowire arrays by metal-assisted chemical etching for antireflection films
title_full_unstemmed	Design and fabrication of wafer-scale highly uniform silicon nanowire arrays by metal-assisted chemical etching for antireflection films
title_sort	design and fabrication of wafer-scale highly uniform silicon nanowire arrays by metal-assisted chemical etching for antireflection films
publisher	Elsevier
publishDate	2021
url	https://doaj.org/article/ee137de234cf4e6bb01bd7701c023637
work_keys_str_mv	AT chuhaoyao designandfabricationofwaferscalehighlyuniformsiliconnanowirearraysbymetalassistedchemicaletchingforantireflectionfilms AT yuezhao designandfabricationofwaferscalehighlyuniformsiliconnanowirearraysbymetalassistedchemicaletchingforantireflectionfilms AT xiaomengzhang designandfabricationofwaferscalehighlyuniformsiliconnanowirearraysbymetalassistedchemicaletchingforantireflectionfilms AT hailiangli designandfabricationofwaferscalehighlyuniformsiliconnanowirearraysbymetalassistedchemicaletchingforantireflectionfilms AT changqingxie designandfabricationofwaferscalehighlyuniformsiliconnanowirearraysbymetalassistedchemicaletchingforantireflectionfilms
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Design and fabrication of wafer-scale highly uniform silicon nanowire arrays by metal-assisted chemical etching for antireflection films

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