Probing defects in ZnO by persistent phosphorescence

Native point defects in ZnO are so complicated that most of them are still debating issues, although they have been studied for decades. In this paper, we experimentally reveal two sub-components usually hidden in the low energy tail of the main broad green luminescence band peaking at 547 nm (~2.26...

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Autores principales:	Ye Honggang, Su Zhicheng, Tang Fei, Bao Yitian, Lao Xiangzhou, Chen Guangde, Wang Jian, Xu Shijie
Formato:	article
Lenguaje:	EN
Publicado:	Institue of Optics and Electronics, Chinese Academy of Sciences 2018
Materias:	zinc oxide defects phosphorescence photoluminescence Optics. Light QC350-467
Acceso en línea:	https://doaj.org/article/ee14fff4bbee419c8682672c1e106fce
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spelling	oai:doaj.org-article:ee14fff4bbee419c8682672c1e106fce2021-11-11T10:07:36ZProbing defects in ZnO by persistent phosphorescence2096-457910.29026/oea.2018.180011https://doaj.org/article/ee14fff4bbee419c8682672c1e106fce2018-07-01T00:00:00Zhttp://www.oejournal.org/article/doi/10.29026/oea.2018.180011https://doaj.org/toc/2096-4579Native point defects in ZnO are so complicated that most of them are still debating issues, although they have been studied for decades. In this paper, we experimentally reveal two sub-components usually hidden in the low energy tail of the main broad green luminescence band peaking at 547 nm (~2.267 eV) in intentionally undoped ZnO single crystal by selecting the below-band-gap (BBG) optical excitations (e.g. light wavelengths of 385 nm and 450 nm). Moreover, both sub-components are manifested as long persistent phosphorescence once the BBG excitations are removed. With the aid of a newly developed model, the energy depths of two electron traps involved within the long lived orange luminescence are determined to be 44 meV and 300 meV, respectively. The candidates of these two electron traps are argued to be most likely hydrogen and zinc interstitials in ZnO.Ye HonggangSu ZhichengTang FeiBao YitianLao XiangzhouChen GuangdeWang JianXu ShijieInstitue of Optics and Electronics, Chinese Academy of Sciencesarticlezinc oxidedefectsphosphorescencephotoluminescenceOptics. LightQC350-467ENOpto-Electronic Advances, Vol 1, Iss 6, Pp 180011-1-180011-6 (2018)
institution	DOAJ
collection	DOAJ
language	EN
topic	zinc oxide defects phosphorescence photoluminescence Optics. Light QC350-467
spellingShingle	zinc oxide defects phosphorescence photoluminescence Optics. Light QC350-467 Ye Honggang Su Zhicheng Tang Fei Bao Yitian Lao Xiangzhou Chen Guangde Wang Jian Xu Shijie Probing defects in ZnO by persistent phosphorescence
description	Native point defects in ZnO are so complicated that most of them are still debating issues, although they have been studied for decades. In this paper, we experimentally reveal two sub-components usually hidden in the low energy tail of the main broad green luminescence band peaking at 547 nm (~2.267 eV) in intentionally undoped ZnO single crystal by selecting the below-band-gap (BBG) optical excitations (e.g. light wavelengths of 385 nm and 450 nm). Moreover, both sub-components are manifested as long persistent phosphorescence once the BBG excitations are removed. With the aid of a newly developed model, the energy depths of two electron traps involved within the long lived orange luminescence are determined to be 44 meV and 300 meV, respectively. The candidates of these two electron traps are argued to be most likely hydrogen and zinc interstitials in ZnO.
format	article
author	Ye Honggang Su Zhicheng Tang Fei Bao Yitian Lao Xiangzhou Chen Guangde Wang Jian Xu Shijie
author_facet	Ye Honggang Su Zhicheng Tang Fei Bao Yitian Lao Xiangzhou Chen Guangde Wang Jian Xu Shijie
author_sort	Ye Honggang
title	Probing defects in ZnO by persistent phosphorescence
title_short	Probing defects in ZnO by persistent phosphorescence
title_full	Probing defects in ZnO by persistent phosphorescence
title_fullStr	Probing defects in ZnO by persistent phosphorescence
title_full_unstemmed	Probing defects in ZnO by persistent phosphorescence
title_sort	probing defects in zno by persistent phosphorescence
publisher	Institue of Optics and Electronics, Chinese Academy of Sciences
publishDate	2018
url	https://doaj.org/article/ee14fff4bbee419c8682672c1e106fce
work_keys_str_mv	AT yehonggang probingdefectsinznobypersistentphosphorescence AT suzhicheng probingdefectsinznobypersistentphosphorescence AT tangfei probingdefectsinznobypersistentphosphorescence AT baoyitian probingdefectsinznobypersistentphosphorescence AT laoxiangzhou probingdefectsinznobypersistentphosphorescence AT chenguangde probingdefectsinznobypersistentphosphorescence AT wangjian probingdefectsinznobypersistentphosphorescence AT xushijie probingdefectsinznobypersistentphosphorescence
_version_	1718439270847348736

Probing defects in ZnO by persistent phosphorescence

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