Modulation of van der Waals and classical epitaxy induced by strain at the Si step edges in GeSbTe alloys

Abstract The present work displays a route to design strain gradients at the interface between substrate and van der Waals bonded materials. The latter are expected to grow decoupled from the substrates and fully relaxed and thus, by definition, incompatible with conventional strain engineering. By...

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Autores principales:	Eugenio Zallo, Stefano Cecchi, Jos E. Boschker, Antonio M. Mio, Fabrizio Arciprete, Stefania Privitera, Raffaella Calarco
Formato:	article
Lenguaje:	EN
Publicado:	Nature Portfolio 2017
Materias:	Medicine R Science Q
Acceso en línea:	https://doaj.org/article/ee90e62a5b6047f7a2f0e1159e2bdfdc
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spelling	oai:doaj.org-article:ee90e62a5b6047f7a2f0e1159e2bdfdc2021-12-02T16:07:04ZModulation of van der Waals and classical epitaxy induced by strain at the Si step edges in GeSbTe alloys10.1038/s41598-017-01502-z2045-2322https://doaj.org/article/ee90e62a5b6047f7a2f0e1159e2bdfdc2017-05-01T00:00:00Zhttps://doi.org/10.1038/s41598-017-01502-zhttps://doaj.org/toc/2045-2322Abstract The present work displays a route to design strain gradients at the interface between substrate and van der Waals bonded materials. The latter are expected to grow decoupled from the substrates and fully relaxed and thus, by definition, incompatible with conventional strain engineering. By the usage of passivated vicinal surfaces we are able to insert strain at step edges of layered chalcogenides, as demonstrated by the tilt of the epilayer in the growth direction with respect of the substrate orientation. The interplay between classical and van der Waals epitaxy can be modulated with an accurate choice of the substrate miscut. High quality crystalline GexSb2Te3+x with almost Ge1Sb2Te4 composition and improved degree of ordering of the vacancy layers is thus obtained by epitaxial growth of layers on 3–4° stepped Si substrates. These results highlight that it is possible to build and control strain in van der Waals systems, therefore opening up new prospects for the functionalization of epilayers by directly employing vicinal substrates.Eugenio ZalloStefano CecchiJos E. BoschkerAntonio M. MioFabrizio ArcipreteStefania PriviteraRaffaella CalarcoNature PortfolioarticleMedicineRScienceQENScientific Reports, Vol 7, Iss 1, Pp 1-7 (2017)
institution	DOAJ
collection	DOAJ
language	EN
topic	Medicine R Science Q
spellingShingle	Medicine R Science Q Eugenio Zallo Stefano Cecchi Jos E. Boschker Antonio M. Mio Fabrizio Arciprete Stefania Privitera Raffaella Calarco Modulation of van der Waals and classical epitaxy induced by strain at the Si step edges in GeSbTe alloys
description	Abstract The present work displays a route to design strain gradients at the interface between substrate and van der Waals bonded materials. The latter are expected to grow decoupled from the substrates and fully relaxed and thus, by definition, incompatible with conventional strain engineering. By the usage of passivated vicinal surfaces we are able to insert strain at step edges of layered chalcogenides, as demonstrated by the tilt of the epilayer in the growth direction with respect of the substrate orientation. The interplay between classical and van der Waals epitaxy can be modulated with an accurate choice of the substrate miscut. High quality crystalline GexSb2Te3+x with almost Ge1Sb2Te4 composition and improved degree of ordering of the vacancy layers is thus obtained by epitaxial growth of layers on 3–4° stepped Si substrates. These results highlight that it is possible to build and control strain in van der Waals systems, therefore opening up new prospects for the functionalization of epilayers by directly employing vicinal substrates.
format	article
author	Eugenio Zallo Stefano Cecchi Jos E. Boschker Antonio M. Mio Fabrizio Arciprete Stefania Privitera Raffaella Calarco
author_facet	Eugenio Zallo Stefano Cecchi Jos E. Boschker Antonio M. Mio Fabrizio Arciprete Stefania Privitera Raffaella Calarco
author_sort	Eugenio Zallo
title	Modulation of van der Waals and classical epitaxy induced by strain at the Si step edges in GeSbTe alloys
title_short	Modulation of van der Waals and classical epitaxy induced by strain at the Si step edges in GeSbTe alloys
title_full	Modulation of van der Waals and classical epitaxy induced by strain at the Si step edges in GeSbTe alloys
title_fullStr	Modulation of van der Waals and classical epitaxy induced by strain at the Si step edges in GeSbTe alloys
title_full_unstemmed	Modulation of van der Waals and classical epitaxy induced by strain at the Si step edges in GeSbTe alloys
title_sort	modulation of van der waals and classical epitaxy induced by strain at the si step edges in gesbte alloys
publisher	Nature Portfolio
publishDate	2017
url	https://doaj.org/article/ee90e62a5b6047f7a2f0e1159e2bdfdc
work_keys_str_mv	AT eugeniozallo modulationofvanderwaalsandclassicalepitaxyinducedbystrainatthesistepedgesingesbtealloys AT stefanocecchi modulationofvanderwaalsandclassicalepitaxyinducedbystrainatthesistepedgesingesbtealloys AT joseboschker modulationofvanderwaalsandclassicalepitaxyinducedbystrainatthesistepedgesingesbtealloys AT antoniommio modulationofvanderwaalsandclassicalepitaxyinducedbystrainatthesistepedgesingesbtealloys AT fabrizioarciprete modulationofvanderwaalsandclassicalepitaxyinducedbystrainatthesistepedgesingesbtealloys AT stefaniaprivitera modulationofvanderwaalsandclassicalepitaxyinducedbystrainatthesistepedgesingesbtealloys AT raffaellacalarco modulationofvanderwaalsandclassicalepitaxyinducedbystrainatthesistepedgesingesbtealloys
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Modulation of van der Waals and classical epitaxy induced by strain at the Si step edges in GeSbTe alloys

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