Modulation of van der Waals and classical epitaxy induced by strain at the Si step edges in GeSbTe alloys

Modulation of van der Waals and classical epitaxy induced by strain at the Si step edges in GeSbTe alloys

Abstract The present work displays a route to design strain gradients at the interface between substrate and van der Waals bonded materials. The latter are expected to grow decoupled from the substrates and fully relaxed and thus, by definition, incompatible with conventional strain engineering. By...

Descripción completa

Guardado en:
Detalles Bibliográficos
Autores principales: Eugenio Zallo, Stefano Cecchi, Jos E. Boschker, Antonio M. Mio, Fabrizio Arciprete, Stefania Privitera, Raffaella Calarco
Formato: article
Lenguaje:EN
Publicado: Nature Portfolio 2017
Materias:
Medicine
R
Science
Q
Acceso en línea:https://doaj.org/article/ee90e62a5b6047f7a2f0e1159e2bdfdc
Etiquetas: Agregar Etiqueta
Sin Etiquetas, Sea el primero en etiquetar este registro!

Ejemplares similares

Ejemplares similares