Gate-tunable spin-galvanic effect in graphene-topological insulator van der Waals heterostructures at room temperature
The spin-galvanic effect allows for the conversion of non-equilibrium spin density into a charge current. Here, by combining graphene in a van de Waals heterostructure with a topological insulator, the authors demonstrate a large, gate-tunable spin-galvanic effect.
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| Autores principales: | , , , |
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| Formato: | article |
| Lenguaje: | EN |
| Publicado: |
Nature Portfolio
2020
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| Materias: | |
| Acceso en línea: | https://doaj.org/article/eeeedfdf9bff4be2aba5139183d551eb |
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| Sumario: | The spin-galvanic effect allows for the conversion of non-equilibrium spin density into a charge current. Here, by combining graphene in a van de Waals heterostructure with a topological insulator, the authors demonstrate a large, gate-tunable spin-galvanic effect. |
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