Gate-tunable spin-galvanic effect in graphene-topological insulator van der Waals heterostructures at room temperature

The spin-galvanic effect allows for the conversion of non-equilibrium spin density into a charge current. Here, by combining graphene in a van de Waals heterostructure with a topological insulator, the authors demonstrate a large, gate-tunable spin-galvanic effect.

Guardado en:
Detalles Bibliográficos
Autores principales: Dmitrii Khokhriakov, Anamul Md. Hoque, Bogdan Karpiak, Saroj P. Dash
Formato: article
Lenguaje:EN
Publicado: Nature Portfolio 2020
Materias:
Q
Acceso en línea:https://doaj.org/article/eeeedfdf9bff4be2aba5139183d551eb
Etiquetas: Agregar Etiqueta
Sin Etiquetas, Sea el primero en etiquetar este registro!
id oai:doaj.org-article:eeeedfdf9bff4be2aba5139183d551eb
record_format dspace
spelling oai:doaj.org-article:eeeedfdf9bff4be2aba5139183d551eb2021-12-02T16:43:46ZGate-tunable spin-galvanic effect in graphene-topological insulator van der Waals heterostructures at room temperature10.1038/s41467-020-17481-12041-1723https://doaj.org/article/eeeedfdf9bff4be2aba5139183d551eb2020-07-01T00:00:00Zhttps://doi.org/10.1038/s41467-020-17481-1https://doaj.org/toc/2041-1723The spin-galvanic effect allows for the conversion of non-equilibrium spin density into a charge current. Here, by combining graphene in a van de Waals heterostructure with a topological insulator, the authors demonstrate a large, gate-tunable spin-galvanic effect.Dmitrii KhokhriakovAnamul Md. HoqueBogdan KarpiakSaroj P. DashNature PortfolioarticleScienceQENNature Communications, Vol 11, Iss 1, Pp 1-7 (2020)
institution DOAJ
collection DOAJ
language EN
topic Science
Q
spellingShingle Science
Q
Dmitrii Khokhriakov
Anamul Md. Hoque
Bogdan Karpiak
Saroj P. Dash
Gate-tunable spin-galvanic effect in graphene-topological insulator van der Waals heterostructures at room temperature
description The spin-galvanic effect allows for the conversion of non-equilibrium spin density into a charge current. Here, by combining graphene in a van de Waals heterostructure with a topological insulator, the authors demonstrate a large, gate-tunable spin-galvanic effect.
format article
author Dmitrii Khokhriakov
Anamul Md. Hoque
Bogdan Karpiak
Saroj P. Dash
author_facet Dmitrii Khokhriakov
Anamul Md. Hoque
Bogdan Karpiak
Saroj P. Dash
author_sort Dmitrii Khokhriakov
title Gate-tunable spin-galvanic effect in graphene-topological insulator van der Waals heterostructures at room temperature
title_short Gate-tunable spin-galvanic effect in graphene-topological insulator van der Waals heterostructures at room temperature
title_full Gate-tunable spin-galvanic effect in graphene-topological insulator van der Waals heterostructures at room temperature
title_fullStr Gate-tunable spin-galvanic effect in graphene-topological insulator van der Waals heterostructures at room temperature
title_full_unstemmed Gate-tunable spin-galvanic effect in graphene-topological insulator van der Waals heterostructures at room temperature
title_sort gate-tunable spin-galvanic effect in graphene-topological insulator van der waals heterostructures at room temperature
publisher Nature Portfolio
publishDate 2020
url https://doaj.org/article/eeeedfdf9bff4be2aba5139183d551eb
work_keys_str_mv AT dmitriikhokhriakov gatetunablespingalvaniceffectingraphenetopologicalinsulatorvanderwaalsheterostructuresatroomtemperature
AT anamulmdhoque gatetunablespingalvaniceffectingraphenetopologicalinsulatorvanderwaalsheterostructuresatroomtemperature
AT bogdankarpiak gatetunablespingalvaniceffectingraphenetopologicalinsulatorvanderwaalsheterostructuresatroomtemperature
AT sarojpdash gatetunablespingalvaniceffectingraphenetopologicalinsulatorvanderwaalsheterostructuresatroomtemperature
_version_ 1718383548578136064