Gate-tunable spin-galvanic effect in graphene-topological insulator van der Waals heterostructures at room temperature

The spin-galvanic effect allows for the conversion of non-equilibrium spin density into a charge current. Here, by combining graphene in a van de Waals heterostructure with a topological insulator, the authors demonstrate a large, gate-tunable spin-galvanic effect.

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Autores principales: Dmitrii Khokhriakov, Anamul Md. Hoque, Bogdan Karpiak, Saroj P. Dash
Formato: article
Lenguaje:EN
Publicado: Nature Portfolio 2020
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Acceso en línea:https://doaj.org/article/eeeedfdf9bff4be2aba5139183d551eb
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