Gate-tunable spin-galvanic effect in graphene-topological insulator van der Waals heterostructures at room temperature
The spin-galvanic effect allows for the conversion of non-equilibrium spin density into a charge current. Here, by combining graphene in a van de Waals heterostructure with a topological insulator, the authors demonstrate a large, gate-tunable spin-galvanic effect.
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Autores principales: | Dmitrii Khokhriakov, Anamul Md. Hoque, Bogdan Karpiak, Saroj P. Dash |
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Formato: | article |
Lenguaje: | EN |
Publicado: |
Nature Portfolio
2020
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Materias: | |
Acceso en línea: | https://doaj.org/article/eeeedfdf9bff4be2aba5139183d551eb |
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