Electrical resistance of individual defects at a topological insulator surface

Electrical resistance of individual defects at a topological insulator surface

Exploiting topological insulator surface states in electronic devices requires an understanding of the factors that affect transport. Here, the authors use scanning tunnelling potentiometry to determine the contributions of different kinds of surface defects to the electrical resistance.

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Detalles Bibliográficos
Autores principales: Felix Lüpke, Markus Eschbach, Tristan Heider, Martin Lanius, Peter Schüffelgen, Daniel Rosenbach, Nils von den Driesch, Vasily Cherepanov, Gregor Mussler, Lukasz Plucinski, Detlev Grützmacher, Claus M. Schneider, Bert Voigtländer
Formato: article
Lenguaje:EN
Publicado: Nature Portfolio 2017
Materias:
Science
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Acceso en línea:https://doaj.org/article/efe40fa904f147b3a819951b62fb0883
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