Improving the Performance of the ToGoFET Probe: Advances in Design, Fabrication, and Signal Processing

We report recent improvements of the tip-on-gate of field-effect-transistor (ToGoFET) probe used for capacitive measurement. Probe structure, fabrication, and signal processing were modified. The inbuilt metal-oxide-semiconductor field-effect-transistor (MOSFET) was redesigned to ensure reliable pro...

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Autores principales:	Hoontaek Lee, Junsoo Kim, Kumjae Shin, Wonkyu Moon
Formato:	article
Lenguaje:	EN
Publicado:	MDPI AG 2021
Materias:	scanning probe microscopy (SPM) scanning capacitive microscopy (SCM) FET sensor subsurface imaging Mechanical engineering and machinery TJ1-1570
Acceso en línea:	https://doaj.org/article/eff2df76f7ed48bbbc4af498d3157158
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spelling	oai:doaj.org-article:eff2df76f7ed48bbbc4af498d31571582021-11-25T18:22:57ZImproving the Performance of the ToGoFET Probe: Advances in Design, Fabrication, and Signal Processing10.3390/mi121113032072-666Xhttps://doaj.org/article/eff2df76f7ed48bbbc4af498d31571582021-10-01T00:00:00Zhttps://www.mdpi.com/2072-666X/12/11/1303https://doaj.org/toc/2072-666XWe report recent improvements of the tip-on-gate of field-effect-transistor (ToGoFET) probe used for capacitive measurement. Probe structure, fabrication, and signal processing were modified. The inbuilt metal-oxide-semiconductor field-effect-transistor (MOSFET) was redesigned to ensure reliable probe operation. Fabrication was based on the standard complementary metal-oxide-semiconductor (CMOS) process, and trench formation and the channel definition were modified. Demodulation of the amplitude-modulated drain current was varied, enhancing the signal-to-noise ratio. The <i>I</i>-<i>V</i> characteristics of the inbuilt MOSFET reflect the design and fabrication modifications, and measurement of a buried electrode revealed improved ToGoFET imaging performance. The minimum measurable value was enhanced 20-fold.Hoontaek LeeJunsoo KimKumjae ShinWonkyu MoonMDPI AGarticlescanning probe microscopy (SPM)scanning capacitive microscopy (SCM)FET sensorsubsurface imagingMechanical engineering and machineryTJ1-1570ENMicromachines, Vol 12, Iss 1303, p 1303 (2021)
institution	DOAJ
collection	DOAJ
language	EN
topic	scanning probe microscopy (SPM) scanning capacitive microscopy (SCM) FET sensor subsurface imaging Mechanical engineering and machinery TJ1-1570
spellingShingle	scanning probe microscopy (SPM) scanning capacitive microscopy (SCM) FET sensor subsurface imaging Mechanical engineering and machinery TJ1-1570 Hoontaek Lee Junsoo Kim Kumjae Shin Wonkyu Moon Improving the Performance of the ToGoFET Probe: Advances in Design, Fabrication, and Signal Processing
description	We report recent improvements of the tip-on-gate of field-effect-transistor (ToGoFET) probe used for capacitive measurement. Probe structure, fabrication, and signal processing were modified. The inbuilt metal-oxide-semiconductor field-effect-transistor (MOSFET) was redesigned to ensure reliable probe operation. Fabrication was based on the standard complementary metal-oxide-semiconductor (CMOS) process, and trench formation and the channel definition were modified. Demodulation of the amplitude-modulated drain current was varied, enhancing the signal-to-noise ratio. The <i>I</i>-<i>V</i> characteristics of the inbuilt MOSFET reflect the design and fabrication modifications, and measurement of a buried electrode revealed improved ToGoFET imaging performance. The minimum measurable value was enhanced 20-fold.
format	article
author	Hoontaek Lee Junsoo Kim Kumjae Shin Wonkyu Moon
author_facet	Hoontaek Lee Junsoo Kim Kumjae Shin Wonkyu Moon
author_sort	Hoontaek Lee
title	Improving the Performance of the ToGoFET Probe: Advances in Design, Fabrication, and Signal Processing
title_short	Improving the Performance of the ToGoFET Probe: Advances in Design, Fabrication, and Signal Processing
title_full	Improving the Performance of the ToGoFET Probe: Advances in Design, Fabrication, and Signal Processing
title_fullStr	Improving the Performance of the ToGoFET Probe: Advances in Design, Fabrication, and Signal Processing
title_full_unstemmed	Improving the Performance of the ToGoFET Probe: Advances in Design, Fabrication, and Signal Processing
title_sort	improving the performance of the togofet probe: advances in design, fabrication, and signal processing
publisher	MDPI AG
publishDate	2021
url	https://doaj.org/article/eff2df76f7ed48bbbc4af498d3157158
work_keys_str_mv	AT hoontaeklee improvingtheperformanceofthetogofetprobeadvancesindesignfabricationandsignalprocessing AT junsookim improvingtheperformanceofthetogofetprobeadvancesindesignfabricationandsignalprocessing AT kumjaeshin improvingtheperformanceofthetogofetprobeadvancesindesignfabricationandsignalprocessing AT wonkyumoon improvingtheperformanceofthetogofetprobeadvancesindesignfabricationandsignalprocessing
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Improving the Performance of the ToGoFET Probe: Advances in Design, Fabrication, and Signal Processing

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