Electrical and dielectric parameters in TiO2-NW/Ge-NW heterostructure MOS device synthesized by glancing angle deposition technique

Abstract This paper reports the catalyst-free coaxial TiO2/Ge-nanowire (NW) heterostructure synthesis using the glancing angle deposition (GLAD) technique integrated into an electron beam evaporator. The frequency and voltage dependence of the capacitance–voltage (C–V) and conductance–voltage (G/ω–V...

Descripción completa

Guardado en:

Detalles Bibliográficos
Autores principales:	H. Manas Singh, Ying Ying Lim, P. Chinnamuthu
Formato:	article
Lenguaje:	EN
Publicado:	Nature Portfolio 2021
Materias:	Medicine R Science Q
Acceso en línea:	https://doaj.org/article/effad7691a3d4c1ab5e061c4148f8164
Etiquetas:	Agregar Etiqueta Sin Etiquetas, Sea el primero en etiquetar este registro!

id	oai:doaj.org-article:effad7691a3d4c1ab5e061c4148f8164
record_format	dspace
spelling	oai:doaj.org-article:effad7691a3d4c1ab5e061c4148f81642021-12-02T18:01:47ZElectrical and dielectric parameters in TiO2-NW/Ge-NW heterostructure MOS device synthesized by glancing angle deposition technique10.1038/s41598-021-99354-12045-2322https://doaj.org/article/effad7691a3d4c1ab5e061c4148f81642021-10-01T00:00:00Zhttps://doi.org/10.1038/s41598-021-99354-1https://doaj.org/toc/2045-2322Abstract This paper reports the catalyst-free coaxial TiO2/Ge-nanowire (NW) heterostructure synthesis using the glancing angle deposition (GLAD) technique integrated into an electron beam evaporator. The frequency and voltage dependence of the capacitance–voltage (C–V) and conductance–voltage (G/ω–V) characteristics of an Ag/TiO2-NW/Ge-NW/Si device over a wide range of frequency (10 kHz–5 MHz) and voltage (− 5 V to + 5 V) at room temperature were investigated. The study established strong dependence on the applied frequency and voltage bias. Both C–V and G/ω–V values showed wide dispersion in depletion region due to interface defect states (Dit) and series resistance (Rs). The C and G/ω value decreases with an increase in applied frequency. The voltage and frequency-dependent Dit and Rs were calculated from the Hill-Coleman and Nicollian–Brews methods, respectively. It is observed that the overall Dit and Rs for the device decrease with an increase in the frequency at different voltages. The dielectric properties such as dielectric constant ( $$\upepsilon$$ ϵ ′), loss ( $$\upepsilon$$ ϵ ″) and loss tangent (tan δ) were determined from the C–V and G/ω–V measurements. It is observed that $$\upepsilon$$ ϵ ′, $$\upepsilon$$ ϵ ″ decreases with the increase in frequency. Therefore, the proposed MOS structure provides a promising alternative approach to enhance the device capability in the opto-electronics industry.H. Manas SinghYing Ying LimP. ChinnamuthuNature PortfolioarticleMedicineRScienceQENScientific Reports, Vol 11, Iss 1, Pp 1-10 (2021)
institution	DOAJ
collection	DOAJ
language	EN
topic	Medicine R Science Q
spellingShingle	Medicine R Science Q H. Manas Singh Ying Ying Lim P. Chinnamuthu Electrical and dielectric parameters in TiO2-NW/Ge-NW heterostructure MOS device synthesized by glancing angle deposition technique
description	Abstract This paper reports the catalyst-free coaxial TiO2/Ge-nanowire (NW) heterostructure synthesis using the glancing angle deposition (GLAD) technique integrated into an electron beam evaporator. The frequency and voltage dependence of the capacitance–voltage (C–V) and conductance–voltage (G/ω–V) characteristics of an Ag/TiO2-NW/Ge-NW/Si device over a wide range of frequency (10 kHz–5 MHz) and voltage (− 5 V to + 5 V) at room temperature were investigated. The study established strong dependence on the applied frequency and voltage bias. Both C–V and G/ω–V values showed wide dispersion in depletion region due to interface defect states (Dit) and series resistance (Rs). The C and G/ω value decreases with an increase in applied frequency. The voltage and frequency-dependent Dit and Rs were calculated from the Hill-Coleman and Nicollian–Brews methods, respectively. It is observed that the overall Dit and Rs for the device decrease with an increase in the frequency at different voltages. The dielectric properties such as dielectric constant ( $$\upepsilon$$ ϵ ′), loss ( $$\upepsilon$$ ϵ ″) and loss tangent (tan δ) were determined from the C–V and G/ω–V measurements. It is observed that $$\upepsilon$$ ϵ ′, $$\upepsilon$$ ϵ ″ decreases with the increase in frequency. Therefore, the proposed MOS structure provides a promising alternative approach to enhance the device capability in the opto-electronics industry.
format	article
author	H. Manas Singh Ying Ying Lim P. Chinnamuthu
author_facet	H. Manas Singh Ying Ying Lim P. Chinnamuthu
author_sort	H. Manas Singh
title	Electrical and dielectric parameters in TiO2-NW/Ge-NW heterostructure MOS device synthesized by glancing angle deposition technique
title_short	Electrical and dielectric parameters in TiO2-NW/Ge-NW heterostructure MOS device synthesized by glancing angle deposition technique
title_full	Electrical and dielectric parameters in TiO2-NW/Ge-NW heterostructure MOS device synthesized by glancing angle deposition technique
title_fullStr	Electrical and dielectric parameters in TiO2-NW/Ge-NW heterostructure MOS device synthesized by glancing angle deposition technique
title_full_unstemmed	Electrical and dielectric parameters in TiO2-NW/Ge-NW heterostructure MOS device synthesized by glancing angle deposition technique
title_sort	electrical and dielectric parameters in tio2-nw/ge-nw heterostructure mos device synthesized by glancing angle deposition technique
publisher	Nature Portfolio
publishDate	2021
url	https://doaj.org/article/effad7691a3d4c1ab5e061c4148f8164
work_keys_str_mv	AT hmanassingh electricalanddielectricparametersintio2nwgenwheterostructuremosdevicesynthesizedbyglancingangledepositiontechnique AT yingyinglim electricalanddielectricparametersintio2nwgenwheterostructuremosdevicesynthesizedbyglancingangledepositiontechnique AT pchinnamuthu electricalanddielectricparametersintio2nwgenwheterostructuremosdevicesynthesizedbyglancingangledepositiontechnique
_version_	1718378963030507520

Electrical and dielectric parameters in TiO2-NW/Ge-NW heterostructure MOS device synthesized by glancing angle deposition technique

Ejemplares similares