Embedded gate CVD MoS2 microwave FETs

High-frequency electronics: embedded gates boost MoS2 radio frequency transistors 2D materials enable radio frequency transistors, yet the absence of a bandgap in graphene limits its maximum oscillation frequency. A team lead by Sanjay Kumar Banerjee at the University of Texas at Austin fabricated r...

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Autores principales:	Atresh Sanne, Saungeun Park, Rudresh Ghosh, Maruthi Nagavalli Yogeesh, Chison Liu, Leo Mathew, Rajesh Rao, Deji Akinwande, Sanjay Kumar Banerjee
Formato:	article
Lenguaje:	EN
Publicado:	Nature Portfolio 2017
Materias:	Materials of engineering and construction. Mechanics of materials TA401-492 Chemistry QD1-999
Acceso en línea:	https://doaj.org/article/f03fce2f8c7f4034b267f49b097e8d5c
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spelling	oai:doaj.org-article:f03fce2f8c7f4034b267f49b097e8d5c2021-12-02T13:41:45ZEmbedded gate CVD MoS2 microwave FETs10.1038/s41699-017-0029-z2397-7132https://doaj.org/article/f03fce2f8c7f4034b267f49b097e8d5c2017-08-01T00:00:00Zhttps://doi.org/10.1038/s41699-017-0029-zhttps://doaj.org/toc/2397-7132High-frequency electronics: embedded gates boost MoS2 radio frequency transistors 2D materials enable radio frequency transistors, yet the absence of a bandgap in graphene limits its maximum oscillation frequency. A team lead by Sanjay Kumar Banerjee at the University of Texas at Austin fabricated radio frequency field-effect transistors using monolayer MoS2 grown by chemical vapor deposition. The devices feature an embedded gate structure which ensures optimal gate control over the conducting channel and improves the channel-dielectric interface, whilst requiring a reduced number of fabrication steps. As a result, the device exhibits a maximum oscillation frequency as high as 11.4 GHz, an I ON/I OFF current ratio of 108, and a remarkable transconductance of 70 μS/μm, among the highest achieved so far for MoS2 devices fabricated by means of chemical vapor deposition. These results advance the state-of-the-art performance of atomically thin radio frequency transistors.Atresh SanneSaungeun ParkRudresh GhoshMaruthi Nagavalli YogeeshChison LiuLeo MathewRajesh RaoDeji AkinwandeSanjay Kumar BanerjeeNature PortfolioarticleMaterials of engineering and construction. Mechanics of materialsTA401-492ChemistryQD1-999ENnpj 2D Materials and Applications, Vol 1, Iss 1, Pp 1-6 (2017)
institution	DOAJ
collection	DOAJ
language	EN
topic	Materials of engineering and construction. Mechanics of materials TA401-492 Chemistry QD1-999
spellingShingle	Materials of engineering and construction. Mechanics of materials TA401-492 Chemistry QD1-999 Atresh Sanne Saungeun Park Rudresh Ghosh Maruthi Nagavalli Yogeesh Chison Liu Leo Mathew Rajesh Rao Deji Akinwande Sanjay Kumar Banerjee Embedded gate CVD MoS2 microwave FETs
description	High-frequency electronics: embedded gates boost MoS2 radio frequency transistors 2D materials enable radio frequency transistors, yet the absence of a bandgap in graphene limits its maximum oscillation frequency. A team lead by Sanjay Kumar Banerjee at the University of Texas at Austin fabricated radio frequency field-effect transistors using monolayer MoS2 grown by chemical vapor deposition. The devices feature an embedded gate structure which ensures optimal gate control over the conducting channel and improves the channel-dielectric interface, whilst requiring a reduced number of fabrication steps. As a result, the device exhibits a maximum oscillation frequency as high as 11.4 GHz, an I ON/I OFF current ratio of 108, and a remarkable transconductance of 70 μS/μm, among the highest achieved so far for MoS2 devices fabricated by means of chemical vapor deposition. These results advance the state-of-the-art performance of atomically thin radio frequency transistors.
format	article
author	Atresh Sanne Saungeun Park Rudresh Ghosh Maruthi Nagavalli Yogeesh Chison Liu Leo Mathew Rajesh Rao Deji Akinwande Sanjay Kumar Banerjee
author_facet	Atresh Sanne Saungeun Park Rudresh Ghosh Maruthi Nagavalli Yogeesh Chison Liu Leo Mathew Rajesh Rao Deji Akinwande Sanjay Kumar Banerjee
author_sort	Atresh Sanne
title	Embedded gate CVD MoS2 microwave FETs
title_short	Embedded gate CVD MoS2 microwave FETs
title_full	Embedded gate CVD MoS2 microwave FETs
title_fullStr	Embedded gate CVD MoS2 microwave FETs
title_full_unstemmed	Embedded gate CVD MoS2 microwave FETs
title_sort	embedded gate cvd mos2 microwave fets
publisher	Nature Portfolio
publishDate	2017
url	https://doaj.org/article/f03fce2f8c7f4034b267f49b097e8d5c
work_keys_str_mv	AT atreshsanne embeddedgatecvdmos2microwavefets AT saungeunpark embeddedgatecvdmos2microwavefets AT rudreshghosh embeddedgatecvdmos2microwavefets AT maruthinagavalliyogeesh embeddedgatecvdmos2microwavefets AT chisonliu embeddedgatecvdmos2microwavefets AT leomathew embeddedgatecvdmos2microwavefets AT rajeshrao embeddedgatecvdmos2microwavefets AT dejiakinwande embeddedgatecvdmos2microwavefets AT sanjaykumarbanerjee embeddedgatecvdmos2microwavefets
_version_	1718392589558743040

Embedded gate CVD MoS2 microwave FETs

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