Compact, Hybrid III-V/Silicon Vernier Laser Diode Operating From 1955–1992 nm
The 2 µm waveband is capable of enabling pervasive applications. The demonstration of the hollow-core photonic bandgap fiber and the thulium-doped fiber amplifier has highlighted the fiber propagation and amplification aspects of fiber communications, indicating its potential as an adjunc...
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oai:doaj.org-article:f03ffe0a9c7f4d50ae9453485c92da992021-11-09T00:00:11ZCompact, Hybrid III-V/Silicon Vernier Laser Diode Operating From 1955–1992 nm1943-065510.1109/JPHOT.2021.3119760https://doaj.org/article/f03ffe0a9c7f4d50ae9453485c92da992021-01-01T00:00:00Zhttps://ieeexplore.ieee.org/document/9573332/https://doaj.org/toc/1943-0655The 2 µm waveband is capable of enabling pervasive applications. The demonstration of the hollow-core photonic bandgap fiber and the thulium-doped fiber amplifier has highlighted the fiber propagation and amplification aspects of fiber communications, indicating its potential as an adjunct to present communication infrastructure at the O/C bands. The above is especially imperative given the current concerns with regards to the upper bandwidth limit of the single-mode fiber. Furthermore, the waveband could facilitate many more applications such as LIDAR and free-space communication. However, water absorption (OH<sup>-</sup>) is high at most of the 2 μm waveband and this will impact the optical insertion loss of applications implemented in the wavelength region. The relative low water absorption region of the waveband falls within 1950 – 2000 nm. As such, the development of a hybrid/heterogeneous III-V/silicon laser source that operates within the region is important for 2 µm silicon photonics. In this work, we demonstrate a III-V/Si hybrid tunable laser operating from 1955 - 1992 nm for the first time. Room temperature continuous wave operation is achieved with a maximum laser output power of 8.1 mW. This wavelength-tunable laser operates specifically within the low water absorption window, indicating good wavelength suitability for applications at the 2 μm waveband.Jia Xu Brian SiaXiang LiWanjun WangZhongliang QiaoX. GuoJiawei WangCallum G. LittlejohnsChongyang LiuGraham T. ReedKian Siong AngHong WangIEEEarticle2 µm silicon photonicshybrid III-V/silicon lasersintegrated opticstunable lasersApplied optics. PhotonicsTA1501-1820Optics. LightQC350-467ENIEEE Photonics Journal, Vol 13, Iss 6, Pp 1-5 (2021) |
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DOAJ |
| collection |
DOAJ |
| language |
EN |
| topic |
2 µm silicon photonics hybrid III-V/silicon lasers integrated optics tunable lasers Applied optics. Photonics TA1501-1820 Optics. Light QC350-467 |
| spellingShingle |
2 µm silicon photonics hybrid III-V/silicon lasers integrated optics tunable lasers Applied optics. Photonics TA1501-1820 Optics. Light QC350-467 Jia Xu Brian Sia Xiang Li Wanjun Wang Zhongliang Qiao X. Guo Jiawei Wang Callum G. Littlejohns Chongyang Liu Graham T. Reed Kian Siong Ang Hong Wang Compact, Hybrid III-V/Silicon Vernier Laser Diode Operating From 1955–1992 nm |
| description |
The 2 µm waveband is capable of enabling pervasive applications. The demonstration of the hollow-core photonic bandgap fiber and the thulium-doped fiber amplifier has highlighted the fiber propagation and amplification aspects of fiber communications, indicating its potential as an adjunct to present communication infrastructure at the O/C bands. The above is especially imperative given the current concerns with regards to the upper bandwidth limit of the single-mode fiber. Furthermore, the waveband could facilitate many more applications such as LIDAR and free-space communication. However, water absorption (OH<sup>-</sup>) is high at most of the 2 μm waveband and this will impact the optical insertion loss of applications implemented in the wavelength region. The relative low water absorption region of the waveband falls within 1950 – 2000 nm. As such, the development of a hybrid/heterogeneous III-V/silicon laser source that operates within the region is important for 2 µm silicon photonics. In this work, we demonstrate a III-V/Si hybrid tunable laser operating from 1955 - 1992 nm for the first time. Room temperature continuous wave operation is achieved with a maximum laser output power of 8.1 mW. This wavelength-tunable laser operates specifically within the low water absorption window, indicating good wavelength suitability for applications at the 2 μm waveband. |
| format |
article |
| author |
Jia Xu Brian Sia Xiang Li Wanjun Wang Zhongliang Qiao X. Guo Jiawei Wang Callum G. Littlejohns Chongyang Liu Graham T. Reed Kian Siong Ang Hong Wang |
| author_facet |
Jia Xu Brian Sia Xiang Li Wanjun Wang Zhongliang Qiao X. Guo Jiawei Wang Callum G. Littlejohns Chongyang Liu Graham T. Reed Kian Siong Ang Hong Wang |
| author_sort |
Jia Xu Brian Sia |
| title |
Compact, Hybrid III-V/Silicon Vernier Laser Diode Operating From 1955–1992 nm |
| title_short |
Compact, Hybrid III-V/Silicon Vernier Laser Diode Operating From 1955–1992 nm |
| title_full |
Compact, Hybrid III-V/Silicon Vernier Laser Diode Operating From 1955–1992 nm |
| title_fullStr |
Compact, Hybrid III-V/Silicon Vernier Laser Diode Operating From 1955–1992 nm |
| title_full_unstemmed |
Compact, Hybrid III-V/Silicon Vernier Laser Diode Operating From 1955–1992 nm |
| title_sort |
compact, hybrid iii-v/silicon vernier laser diode operating from 1955–1992 nm |
| publisher |
IEEE |
| publishDate |
2021 |
| url |
https://doaj.org/article/f03ffe0a9c7f4d50ae9453485c92da99 |
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