Photo-Sintered Silver Thin Films by a High-Power UV-LED Module for Flexible Electronic Applications

In recent printed electronics technology, a photo-sintering technique using intense pulsed light (IPL) source has attracted attention, instead of conventional a thermal sintering process with long time and high temperature. The key principle of the photo-sintering process is the selective heating of...

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Autores principales:	Minha Kim, Hongsub Jee, Jaehyeong Lee
Formato:	article
Lenguaje:	EN
Publicado:	MDPI AG 2021
Materias:	silver thin film photo-sintering ultraviolet light emitting diode (UV-LED) low temperature process flexible substrate Chemistry QD1-999
Acceso en línea:	https://doaj.org/article/f051034686d84d17a3d53b6387002b01
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spelling	oai:doaj.org-article:f051034686d84d17a3d53b6387002b012021-11-25T18:30:14ZPhoto-Sintered Silver Thin Films by a High-Power UV-LED Module for Flexible Electronic Applications10.3390/nano111128402079-4991https://doaj.org/article/f051034686d84d17a3d53b6387002b012021-10-01T00:00:00Zhttps://www.mdpi.com/2079-4991/11/11/2840https://doaj.org/toc/2079-4991In recent printed electronics technology, a photo-sintering technique using intense pulsed light (IPL) source has attracted attention, instead of conventional a thermal sintering process with long time and high temperature. The key principle of the photo-sintering process is the selective heating of a thin film with large light absorption coefficients, while a transparent substrate does not heat by the IPL source. Most research on photo-sintering has used a xenon flash lamp as a light source. However, the xenon flash lamp requires instantaneous high power and is unsuitable for large area applications. In this work, we developed a new photo-sintering system using a high-power ultraviolet light emitting diode (UV-LED) module. A LED light source has many merits such as low power consumption and potential large-scale application. The silver nanoparticles ink was inkjet-printed on a polyethylene terephthalate (PET) and photo-sintered by the UV-LED module with the wavelength of 365 and 385 nm. The electrical resistivity as low as 5.44 × 10<sup>−6</sup> Ω·cm (just about three times compared to value of bulk silver) was achieved at optimized photo-sintering conditions (wavelength of 365 nm and light intensity of 300 mW/cm<sup>2</sup>).Minha KimHongsub JeeJaehyeong LeeMDPI AGarticlesilver thin filmphoto-sinteringultraviolet light emitting diode (UV-LED)low temperature processflexible substrateChemistryQD1-999ENNanomaterials, Vol 11, Iss 2840, p 2840 (2021)
institution	DOAJ
collection	DOAJ
language	EN
topic	silver thin film photo-sintering ultraviolet light emitting diode (UV-LED) low temperature process flexible substrate Chemistry QD1-999
spellingShingle	silver thin film photo-sintering ultraviolet light emitting diode (UV-LED) low temperature process flexible substrate Chemistry QD1-999 Minha Kim Hongsub Jee Jaehyeong Lee Photo-Sintered Silver Thin Films by a High-Power UV-LED Module for Flexible Electronic Applications
description	In recent printed electronics technology, a photo-sintering technique using intense pulsed light (IPL) source has attracted attention, instead of conventional a thermal sintering process with long time and high temperature. The key principle of the photo-sintering process is the selective heating of a thin film with large light absorption coefficients, while a transparent substrate does not heat by the IPL source. Most research on photo-sintering has used a xenon flash lamp as a light source. However, the xenon flash lamp requires instantaneous high power and is unsuitable for large area applications. In this work, we developed a new photo-sintering system using a high-power ultraviolet light emitting diode (UV-LED) module. A LED light source has many merits such as low power consumption and potential large-scale application. The silver nanoparticles ink was inkjet-printed on a polyethylene terephthalate (PET) and photo-sintered by the UV-LED module with the wavelength of 365 and 385 nm. The electrical resistivity as low as 5.44 × 10<sup>−6</sup> Ω·cm (just about three times compared to value of bulk silver) was achieved at optimized photo-sintering conditions (wavelength of 365 nm and light intensity of 300 mW/cm<sup>2</sup>).
format	article
author	Minha Kim Hongsub Jee Jaehyeong Lee
author_facet	Minha Kim Hongsub Jee Jaehyeong Lee
author_sort	Minha Kim
title	Photo-Sintered Silver Thin Films by a High-Power UV-LED Module for Flexible Electronic Applications
title_short	Photo-Sintered Silver Thin Films by a High-Power UV-LED Module for Flexible Electronic Applications
title_full	Photo-Sintered Silver Thin Films by a High-Power UV-LED Module for Flexible Electronic Applications
title_fullStr	Photo-Sintered Silver Thin Films by a High-Power UV-LED Module for Flexible Electronic Applications
title_full_unstemmed	Photo-Sintered Silver Thin Films by a High-Power UV-LED Module for Flexible Electronic Applications
title_sort	photo-sintered silver thin films by a high-power uv-led module for flexible electronic applications
publisher	MDPI AG
publishDate	2021
url	https://doaj.org/article/f051034686d84d17a3d53b6387002b01
work_keys_str_mv	AT minhakim photosinteredsilverthinfilmsbyahighpoweruvledmoduleforflexibleelectronicapplications AT hongsubjee photosinteredsilverthinfilmsbyahighpoweruvledmoduleforflexibleelectronicapplications AT jaehyeonglee photosinteredsilverthinfilmsbyahighpoweruvledmoduleforflexibleelectronicapplications
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Photo-Sintered Silver Thin Films by a High-Power UV-LED Module for Flexible Electronic Applications

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