Gate Oxide and Implantation Process Co-Optimization for Low-Power MCU Applications
The fast development in microcontroller unit (MCU) technology has urged continuous decreasing in power consumption by different assignment of operating status among devices. In this work, we focused on the ultra-high Vth (UHVT) transistor and used gate oxide thickness and Vth implantation co-optimiz...
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| Auteurs principaux: | , , , , |
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| Format: | article |
| Langue: | EN |
| Publié: |
IEEE
2021
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| Sujets: | |
| Accès en ligne: | https://doaj.org/article/f06ea28a616943c38fa53f2f9bcfa7c3 |
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