Gate Oxide and Implantation Process Co-Optimization for Low-Power MCU Applications

The fast development in microcontroller unit (MCU) technology has urged continuous decreasing in power consumption by different assignment of operating status among devices. In this work, we focused on the ultra-high Vth (UHVT) transistor and used gate oxide thickness and Vth implantation co-optimiz...

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Bibliographic Details
Main Authors: Zijian Zhao, Yao Zhou, Hao Zhu, Qingqing Sun, David Wei Zhang
Format: article
Language:EN
Published: IEEE 2021
Subjects:
MCU
Online Access:https://doaj.org/article/f06ea28a616943c38fa53f2f9bcfa7c3
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