Impact of molybdenum out diffusion and interface quality on the performance of sputter grown CZTS based solar cells

Abstract We have investigated the impact of Cu2ZnSnS4-Molybdenum (Mo) interface quality on the performance of sputter-grown Cu2ZnSnS4 (CZTS) solar cell. Thin film CZTS was deposited by sputter deposition technique using stoichiometry quaternary CZTS target. Formation of molybdenum sulphide (MoSx) in...

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Autores principales: Goutam Kumar Dalapati, Siarhei Zhuk, Saeid Masudy-Panah, Ajay Kushwaha, Hwee Leng Seng, Vijila Chellappan, Vignesh Suresh, Zhenghua Su, Sudip Kumar Batabyal, Cheng Cheh Tan, Asim Guchhait, Lydia Helena Wong, Terence Kin Shun Wong, Sudhiranjan Tripathy
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Publicado: Nature Portfolio 2017
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spelling oai:doaj.org-article:f0b72e26734e48f88ba1e19bdcf9fb7e2021-12-02T16:08:07ZImpact of molybdenum out diffusion and interface quality on the performance of sputter grown CZTS based solar cells10.1038/s41598-017-01605-72045-2322https://doaj.org/article/f0b72e26734e48f88ba1e19bdcf9fb7e2017-05-01T00:00:00Zhttps://doi.org/10.1038/s41598-017-01605-7https://doaj.org/toc/2045-2322Abstract We have investigated the impact of Cu2ZnSnS4-Molybdenum (Mo) interface quality on the performance of sputter-grown Cu2ZnSnS4 (CZTS) solar cell. Thin film CZTS was deposited by sputter deposition technique using stoichiometry quaternary CZTS target. Formation of molybdenum sulphide (MoSx) interfacial layer is observed in sputter grown CZTS films after sulphurization. Thickness of MoSx layer is found ~142 nm when CZTS layer (550 nm thick) is sulphurized at 600 °C. Thickness of MoSx layer significantly increased to ~240 nm in case of thicker CZTS layer (650 nm) under similar sulphurization condition. We also observe that high temperature (600 °C) annealing suppress the elemental impurities (Cu, Zn, Sn) at interfacial layer. The amount of out-diffused Mo significantly varies with the change in sulphurization temperature. The out-diffused Mo into CZTS layer and reconstructed interfacial layer remarkably decreases series resistance and increases shunt resistance of the solar cell. The overall efficiency of the solar cell is improved by nearly five times when 600 °C sulphurized CZTS layer is applied in place of 500 °C sulphurized layer. Molybdenum and sulphur diffusion reconstruct the interface layer during heat treatment and play the major role in charge carrier dynamics of a photovoltaic device.Goutam Kumar DalapatiSiarhei ZhukSaeid Masudy-PanahAjay KushwahaHwee Leng SengVijila ChellappanVignesh SureshZhenghua SuSudip Kumar BatabyalCheng Cheh TanAsim GuchhaitLydia Helena WongTerence Kin Shun WongSudhiranjan TripathyNature PortfolioarticleMedicineRScienceQENScientific Reports, Vol 7, Iss 1, Pp 1-12 (2017)
institution DOAJ
collection DOAJ
language EN
topic Medicine
R
Science
Q
spellingShingle Medicine
R
Science
Q
Goutam Kumar Dalapati
Siarhei Zhuk
Saeid Masudy-Panah
Ajay Kushwaha
Hwee Leng Seng
Vijila Chellappan
Vignesh Suresh
Zhenghua Su
Sudip Kumar Batabyal
Cheng Cheh Tan
Asim Guchhait
Lydia Helena Wong
Terence Kin Shun Wong
Sudhiranjan Tripathy
Impact of molybdenum out diffusion and interface quality on the performance of sputter grown CZTS based solar cells
description Abstract We have investigated the impact of Cu2ZnSnS4-Molybdenum (Mo) interface quality on the performance of sputter-grown Cu2ZnSnS4 (CZTS) solar cell. Thin film CZTS was deposited by sputter deposition technique using stoichiometry quaternary CZTS target. Formation of molybdenum sulphide (MoSx) interfacial layer is observed in sputter grown CZTS films after sulphurization. Thickness of MoSx layer is found ~142 nm when CZTS layer (550 nm thick) is sulphurized at 600 °C. Thickness of MoSx layer significantly increased to ~240 nm in case of thicker CZTS layer (650 nm) under similar sulphurization condition. We also observe that high temperature (600 °C) annealing suppress the elemental impurities (Cu, Zn, Sn) at interfacial layer. The amount of out-diffused Mo significantly varies with the change in sulphurization temperature. The out-diffused Mo into CZTS layer and reconstructed interfacial layer remarkably decreases series resistance and increases shunt resistance of the solar cell. The overall efficiency of the solar cell is improved by nearly five times when 600 °C sulphurized CZTS layer is applied in place of 500 °C sulphurized layer. Molybdenum and sulphur diffusion reconstruct the interface layer during heat treatment and play the major role in charge carrier dynamics of a photovoltaic device.
format article
author Goutam Kumar Dalapati
Siarhei Zhuk
Saeid Masudy-Panah
Ajay Kushwaha
Hwee Leng Seng
Vijila Chellappan
Vignesh Suresh
Zhenghua Su
Sudip Kumar Batabyal
Cheng Cheh Tan
Asim Guchhait
Lydia Helena Wong
Terence Kin Shun Wong
Sudhiranjan Tripathy
author_facet Goutam Kumar Dalapati
Siarhei Zhuk
Saeid Masudy-Panah
Ajay Kushwaha
Hwee Leng Seng
Vijila Chellappan
Vignesh Suresh
Zhenghua Su
Sudip Kumar Batabyal
Cheng Cheh Tan
Asim Guchhait
Lydia Helena Wong
Terence Kin Shun Wong
Sudhiranjan Tripathy
author_sort Goutam Kumar Dalapati
title Impact of molybdenum out diffusion and interface quality on the performance of sputter grown CZTS based solar cells
title_short Impact of molybdenum out diffusion and interface quality on the performance of sputter grown CZTS based solar cells
title_full Impact of molybdenum out diffusion and interface quality on the performance of sputter grown CZTS based solar cells
title_fullStr Impact of molybdenum out diffusion and interface quality on the performance of sputter grown CZTS based solar cells
title_full_unstemmed Impact of molybdenum out diffusion and interface quality on the performance of sputter grown CZTS based solar cells
title_sort impact of molybdenum out diffusion and interface quality on the performance of sputter grown czts based solar cells
publisher Nature Portfolio
publishDate 2017
url https://doaj.org/article/f0b72e26734e48f88ba1e19bdcf9fb7e
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