All-inorganic perovskite quantum dot light-emitting memories
Electric field induced ion migration is a well-known phenomenon in perovskite, but the consequences are notorious, and thus needs to be prevented. Here, on the other hand, the authors cleverly manipulate this event for realising resistive random-access memory and light-emitting electrochemical cell...
Enregistré dans:
Auteurs principaux: | Meng-Cheng Yen, Chia-Jung Lee, Kang-Hsiang Liu, Yi Peng, Junfu Leng, Tzu-Hsuan Chang, Chun-Chieh Chang, Kaoru Tamada, Ya-Ju Lee |
---|---|
Format: | article |
Langue: | EN |
Publié: |
Nature Portfolio
2021
|
Sujets: | |
Accès en ligne: | https://doaj.org/article/f1155131f73a4d929c2706f0c0f8bae3 |
Tags: |
Ajouter un tag
Pas de tags, Soyez le premier à ajouter un tag!
|
Documents similaires
-
Designing zero-dimensional dimer-type all-inorganic perovskites for ultra-fast switching memory
par: Youngjun Park, et autres
Publié: (2021) -
Near-infrared-triggered photon upconversion tuning in all-inorganic cesium lead halide perovskite quantum dots
par: Wei Zheng, et autres
Publié: (2018) -
Hybrid Organic-Inorganic Perovskite Memory with Long-Term Stability in Air
par: Bohee Hwang, et autres
Publié: (2017) -
Resistance Switching Effect of Memory Device Based on All-Inorganic Cspbbri<sub>2</sub> Perovskite
par: Wang Ke, et autres
Publié: (2021) -
Ultra-bright and highly efficient inorganic based perovskite light-emitting diodes
par: Liuqi Zhang, et autres
Publié: (2017)