Microsecond Pulse I–V Approach to Understanding Defects in High Mobility Bi-layer Oxide Semiconductor Transistor

Abstract The carrier transport and device instability of amorphous oxide semiconductor devices are influenced by defects that are exponentially distributed in energy, because of amorphous phase channels and front/back interfaces with a large number of sub-gap states. Thus, understanding defects and...

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Autores principales:	Hyunsuk Woo, Sanghun Jeon
Formato:	article
Lenguaje:	EN
Publicado:	Nature Portfolio 2017
Materias:	Medicine R Science Q
Acceso en línea:	https://doaj.org/article/f1272c5aef194da6bdcd50301d243115
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spelling	oai:doaj.org-article:f1272c5aef194da6bdcd50301d2431152021-12-02T11:53:10ZMicrosecond Pulse I–V Approach to Understanding Defects in High Mobility Bi-layer Oxide Semiconductor Transistor10.1038/s41598-017-06613-12045-2322https://doaj.org/article/f1272c5aef194da6bdcd50301d2431152017-08-01T00:00:00Zhttps://doi.org/10.1038/s41598-017-06613-1https://doaj.org/toc/2045-2322Abstract The carrier transport and device instability of amorphous oxide semiconductor devices are influenced by defects that are exponentially distributed in energy, because of amorphous phase channels and front/back interfaces with a large number of sub-gap states. Thus, understanding defects and charge trapping in oxide semiconductor transistors is required for being core device element in reliable production lines. In this paper, we present the transient charging effect, the charge trapping mechanism, and the dynamic charge transport of high-mobility bilayer oxide semiconductor transistors. To this end, we exploited microsecond ramps, pulse ID–VG, transient current, and discharge current analysis methods. The mobility enhancement rate of single HfInZnO (HIZO) and bilayer HfInZnO-InZnO (HIZO-IZO) were 173.8 and 28.8%, respectively, in the charge-trapping-free environment. Transient charge trapping can be classified to temperature insensitive fast charging and thermally activated slow charging with two different trap energies. Insignificant fast transient charging of a bilayer-oxide high-mobility thin film transistor(TFT) can be explained by the low density of sub-gap states in the oxide semiconductor. Understanding defects and transient charging in the oxide semiconductor helps to determine the origin of device instability of oxide TFTs, and finally, to solve this problem.Hyunsuk WooSanghun JeonNature PortfolioarticleMedicineRScienceQENScientific Reports, Vol 7, Iss 1, Pp 1-10 (2017)
institution	DOAJ
collection	DOAJ
language	EN
topic	Medicine R Science Q
spellingShingle	Medicine R Science Q Hyunsuk Woo Sanghun Jeon Microsecond Pulse I–V Approach to Understanding Defects in High Mobility Bi-layer Oxide Semiconductor Transistor
description	Abstract The carrier transport and device instability of amorphous oxide semiconductor devices are influenced by defects that are exponentially distributed in energy, because of amorphous phase channels and front/back interfaces with a large number of sub-gap states. Thus, understanding defects and charge trapping in oxide semiconductor transistors is required for being core device element in reliable production lines. In this paper, we present the transient charging effect, the charge trapping mechanism, and the dynamic charge transport of high-mobility bilayer oxide semiconductor transistors. To this end, we exploited microsecond ramps, pulse ID–VG, transient current, and discharge current analysis methods. The mobility enhancement rate of single HfInZnO (HIZO) and bilayer HfInZnO-InZnO (HIZO-IZO) were 173.8 and 28.8%, respectively, in the charge-trapping-free environment. Transient charge trapping can be classified to temperature insensitive fast charging and thermally activated slow charging with two different trap energies. Insignificant fast transient charging of a bilayer-oxide high-mobility thin film transistor(TFT) can be explained by the low density of sub-gap states in the oxide semiconductor. Understanding defects and transient charging in the oxide semiconductor helps to determine the origin of device instability of oxide TFTs, and finally, to solve this problem.
format	article
author	Hyunsuk Woo Sanghun Jeon
author_facet	Hyunsuk Woo Sanghun Jeon
author_sort	Hyunsuk Woo
title	Microsecond Pulse I–V Approach to Understanding Defects in High Mobility Bi-layer Oxide Semiconductor Transistor
title_short	Microsecond Pulse I–V Approach to Understanding Defects in High Mobility Bi-layer Oxide Semiconductor Transistor
title_full	Microsecond Pulse I–V Approach to Understanding Defects in High Mobility Bi-layer Oxide Semiconductor Transistor
title_fullStr	Microsecond Pulse I–V Approach to Understanding Defects in High Mobility Bi-layer Oxide Semiconductor Transistor
title_full_unstemmed	Microsecond Pulse I–V Approach to Understanding Defects in High Mobility Bi-layer Oxide Semiconductor Transistor
title_sort	microsecond pulse i–v approach to understanding defects in high mobility bi-layer oxide semiconductor transistor
publisher	Nature Portfolio
publishDate	2017
url	https://doaj.org/article/f1272c5aef194da6bdcd50301d243115
work_keys_str_mv	AT hyunsukwoo microsecondpulseivapproachtounderstandingdefectsinhighmobilitybilayeroxidesemiconductortransistor AT sanghunjeon microsecondpulseivapproachtounderstandingdefectsinhighmobilitybilayeroxidesemiconductortransistor
_version_	1718394901739077632

Microsecond Pulse I–V Approach to Understanding Defects in High Mobility Bi-layer Oxide Semiconductor Transistor

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