Microsecond Pulse I–V Approach to Understanding Defects in High Mobility Bi-layer Oxide Semiconductor Transistor
Abstract The carrier transport and device instability of amorphous oxide semiconductor devices are influenced by defects that are exponentially distributed in energy, because of amorphous phase channels and front/back interfaces with a large number of sub-gap states. Thus, understanding defects and...
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| Autores principales: | , |
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| Formato: | article |
| Lenguaje: | EN |
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Nature Portfolio
2017
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| Materias: | |
| Acceso en línea: | https://doaj.org/article/f1272c5aef194da6bdcd50301d243115 |
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