Low-field electron mobility of InSb nanowires: Numerical efforts to larger cross sections

Abstract Within the framework of Boltzmann equation, we present a k · p theory based study for the low-field mobilities of InSb nanowires (InSb NWs) with relatively large cross sectional sizes (with diameters up to 51.8 nm). For such type of large size nanowires, the intersubband electron-phonon sca...

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Autores principales:	Wei Feng, Chen Peng, Shuang Li, Xin-Qi Li
Formato:	article
Lenguaje:	EN
Publicado:	Nature Portfolio 2017
Materias:	Medicine R Science Q
Acceso en línea:	https://doaj.org/article/f135fe81f08a427381daf531dab788da
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spelling	oai:doaj.org-article:f135fe81f08a427381daf531dab788da2021-12-02T16:06:36ZLow-field electron mobility of InSb nanowires: Numerical efforts to larger cross sections10.1038/s41598-017-02536-z2045-2322https://doaj.org/article/f135fe81f08a427381daf531dab788da2017-05-01T00:00:00Zhttps://doi.org/10.1038/s41598-017-02536-zhttps://doaj.org/toc/2045-2322Abstract Within the framework of Boltzmann equation, we present a k · p theory based study for the low-field mobilities of InSb nanowires (InSb NWs) with relatively large cross sectional sizes (with diameters up to 51.8 nm). For such type of large size nanowires, the intersubband electron-phonon scattering is of crucial importance to affect the scattering rate and then the mobility. In our simulation, the lowest 15 electron subbands and 50 transverse modes of phonons are carefully accounted for. We find that, up to the 51.84 nm diameter, the mobility monotonously increases with the diameter, not yet showing any saturated behavior. We also find that, while the bulk InSb mobility is considerably higher than the bulk Si, the small size (e.g. ~3 nm diameter) nanowires from both materials have similar magnitude of mobilities. This implies, importantly, that the mobility of the InSb NWs would decrease faster than the SiNWs as we reduce the cross sectional size of the nanowires.Wei FengChen PengShuang LiXin-Qi LiNature PortfolioarticleMedicineRScienceQENScientific Reports, Vol 7, Iss 1, Pp 1-8 (2017)
institution	DOAJ
collection	DOAJ
language	EN
topic	Medicine R Science Q
spellingShingle	Medicine R Science Q Wei Feng Chen Peng Shuang Li Xin-Qi Li Low-field electron mobility of InSb nanowires: Numerical efforts to larger cross sections
description	Abstract Within the framework of Boltzmann equation, we present a k · p theory based study for the low-field mobilities of InSb nanowires (InSb NWs) with relatively large cross sectional sizes (with diameters up to 51.8 nm). For such type of large size nanowires, the intersubband electron-phonon scattering is of crucial importance to affect the scattering rate and then the mobility. In our simulation, the lowest 15 electron subbands and 50 transverse modes of phonons are carefully accounted for. We find that, up to the 51.84 nm diameter, the mobility monotonously increases with the diameter, not yet showing any saturated behavior. We also find that, while the bulk InSb mobility is considerably higher than the bulk Si, the small size (e.g. ~3 nm diameter) nanowires from both materials have similar magnitude of mobilities. This implies, importantly, that the mobility of the InSb NWs would decrease faster than the SiNWs as we reduce the cross sectional size of the nanowires.
format	article
author	Wei Feng Chen Peng Shuang Li Xin-Qi Li
author_facet	Wei Feng Chen Peng Shuang Li Xin-Qi Li
author_sort	Wei Feng
title	Low-field electron mobility of InSb nanowires: Numerical efforts to larger cross sections
title_short	Low-field electron mobility of InSb nanowires: Numerical efforts to larger cross sections
title_full	Low-field electron mobility of InSb nanowires: Numerical efforts to larger cross sections
title_fullStr	Low-field electron mobility of InSb nanowires: Numerical efforts to larger cross sections
title_full_unstemmed	Low-field electron mobility of InSb nanowires: Numerical efforts to larger cross sections
title_sort	low-field electron mobility of insb nanowires: numerical efforts to larger cross sections
publisher	Nature Portfolio
publishDate	2017
url	https://doaj.org/article/f135fe81f08a427381daf531dab788da
work_keys_str_mv	AT weifeng lowfieldelectronmobilityofinsbnanowiresnumericaleffortstolargercrosssections AT chenpeng lowfieldelectronmobilityofinsbnanowiresnumericaleffortstolargercrosssections AT shuangli lowfieldelectronmobilityofinsbnanowiresnumericaleffortstolargercrosssections AT xinqili lowfieldelectronmobilityofinsbnanowiresnumericaleffortstolargercrosssections
_version_	1718385000727969792

Low-field electron mobility of InSb nanowires: Numerical efforts to larger cross sections

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