Effect of Wafer Tilt During Ion Implantation on the Performance of a Silicon Traveling-Wave Mach-Zehnder Modulator

This paper reports a study of the effect of wafer tilt during dopant implantation on the performance of silicon PN phase shifter and traveling-wave Mach-Zehnder modulator. The PN phase shifter is designed and process simulated to include the effects of different fabrication processes in the device p...

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Autores principales:	Darpan Mishra, Ramesh Kumar Sonkar
Formato:	article
Lenguaje:	EN
Publicado:	IEEE 2021
Materias:	Mach-Zehnder modulator process simulation silicon photonics traveling-wave electrode Electrical engineering. Electronics. Nuclear engineering TK1-9971
Acceso en línea:	https://doaj.org/article/f204a70833e440baa34a22ba1ea8d8c3
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spelling	oai:doaj.org-article:f204a70833e440baa34a22ba1ea8d8c32021-11-18T00:01:39ZEffect of Wafer Tilt During Ion Implantation on the Performance of a Silicon Traveling-Wave Mach-Zehnder Modulator2169-353610.1109/ACCESS.2021.3125446https://doaj.org/article/f204a70833e440baa34a22ba1ea8d8c32021-01-01T00:00:00Zhttps://ieeexplore.ieee.org/document/9600820/https://doaj.org/toc/2169-3536This paper reports a study of the effect of wafer tilt during dopant implantation on the performance of silicon PN phase shifter and traveling-wave Mach-Zehnder modulator. The PN phase shifter is designed and process simulated to include the effects of different fabrication processes in the device performance. The wafer tilt during implantation is varied from 0° to 3°, 5°, and 7°. The resulting crystal damage during dopant implantation to form the PN junction and the active concentration profile upon annealing, along with the formation of dopant–defect clusters, are discussed. Compared to 0° tilt, 7° tilt results in <inline-formula> <tex-math notation="LaTeX">$1.58\times $ </tex-math></inline-formula> higher phase shift and better modulation efficiency. The overall phase shifter performance is improved using 5° wafer tilt for implantation resulting in <inline-formula> <tex-math notation="LaTeX">$1.23\times $ </tex-math></inline-formula> lower absorption, <inline-formula> <tex-math notation="LaTeX">$1.45\times $ </tex-math></inline-formula> better modulation efficiency, and <inline-formula> <tex-math notation="LaTeX">$3.14\times $ </tex-math></inline-formula> higher 3 dB <inline-formula> <tex-math notation="LaTeX">$RC$ </tex-math></inline-formula> modulation bandwidth for lumped-driven phase shifter. A traveling-wave electrode to enhance the modulation bandwidth is used, and the modulator performance for non-return-to-zero on-off-keying modulation with–2.5 V bias and 2.5 <inline-formula> <tex-math notation="LaTeX">$\text{V}_{pp}$ </tex-math></inline-formula> drive signal across each arm is evaluated using a dual-arm push-pull drive. The sample with 5° tilt shows better traveling-wave and modulator high-speed characteristics compared to the other samples. Among the four samples with different wafer tilts, the sample with 0° tilt shows the worst phase shifter performance, and the sample with 3° tilt shows the worst modulator characteristics. The best overall performance is obtained for the sample with 5° tilt. Compared to the modulator with implantation at 0° tilt, the 5° tilted sample shows <inline-formula> <tex-math notation="LaTeX">$2.3\times $ </tex-math></inline-formula> higher 6.4 dB electrical bandwidth and <inline-formula> <tex-math notation="LaTeX">$1.36\times $ </tex-math></inline-formula> higher 3 dB electro-optic bandwidth at–2.5 V using a traveling-wave electrode with <inline-formula> <tex-math notation="LaTeX">$1.48\times $ </tex-math></inline-formula> lower energy-per-bit for 5 km transmission at the KP4-forward-error-correction bit-error-rate threshold. The comparison of the effect of wafer tilt angles on various device metrics is presented and discussed.Darpan MishraRamesh Kumar SonkarIEEEarticleMach-Zehnder modulatorprocess simulationsilicon photonicstraveling-wave electrodeElectrical engineering. Electronics. Nuclear engineeringTK1-9971ENIEEE Access, Vol 9, Pp 149993-150003 (2021)
institution	DOAJ
collection	DOAJ
language	EN
topic	Mach-Zehnder modulator process simulation silicon photonics traveling-wave electrode Electrical engineering. Electronics. Nuclear engineering TK1-9971
spellingShingle	Mach-Zehnder modulator process simulation silicon photonics traveling-wave electrode Electrical engineering. Electronics. Nuclear engineering TK1-9971 Darpan Mishra Ramesh Kumar Sonkar Effect of Wafer Tilt During Ion Implantation on the Performance of a Silicon Traveling-Wave Mach-Zehnder Modulator
description	This paper reports a study of the effect of wafer tilt during dopant implantation on the performance of silicon PN phase shifter and traveling-wave Mach-Zehnder modulator. The PN phase shifter is designed and process simulated to include the effects of different fabrication processes in the device performance. The wafer tilt during implantation is varied from 0° to 3°, 5°, and 7°. The resulting crystal damage during dopant implantation to form the PN junction and the active concentration profile upon annealing, along with the formation of dopant–defect clusters, are discussed. Compared to 0° tilt, 7° tilt results in <inline-formula> <tex-math notation="LaTeX">$1.58\times $ </tex-math></inline-formula> higher phase shift and better modulation efficiency. The overall phase shifter performance is improved using 5° wafer tilt for implantation resulting in <inline-formula> <tex-math notation="LaTeX">$1.23\times $ </tex-math></inline-formula> lower absorption, <inline-formula> <tex-math notation="LaTeX">$1.45\times $ </tex-math></inline-formula> better modulation efficiency, and <inline-formula> <tex-math notation="LaTeX">$3.14\times $ </tex-math></inline-formula> higher 3 dB <inline-formula> <tex-math notation="LaTeX">$RC$ </tex-math></inline-formula> modulation bandwidth for lumped-driven phase shifter. A traveling-wave electrode to enhance the modulation bandwidth is used, and the modulator performance for non-return-to-zero on-off-keying modulation with–2.5 V bias and 2.5 <inline-formula> <tex-math notation="LaTeX">$\text{V}_{pp}$ </tex-math></inline-formula> drive signal across each arm is evaluated using a dual-arm push-pull drive. The sample with 5° tilt shows better traveling-wave and modulator high-speed characteristics compared to the other samples. Among the four samples with different wafer tilts, the sample with 0° tilt shows the worst phase shifter performance, and the sample with 3° tilt shows the worst modulator characteristics. The best overall performance is obtained for the sample with 5° tilt. Compared to the modulator with implantation at 0° tilt, the 5° tilted sample shows <inline-formula> <tex-math notation="LaTeX">$2.3\times $ </tex-math></inline-formula> higher 6.4 dB electrical bandwidth and <inline-formula> <tex-math notation="LaTeX">$1.36\times $ </tex-math></inline-formula> higher 3 dB electro-optic bandwidth at–2.5 V using a traveling-wave electrode with <inline-formula> <tex-math notation="LaTeX">$1.48\times $ </tex-math></inline-formula> lower energy-per-bit for 5 km transmission at the KP4-forward-error-correction bit-error-rate threshold. The comparison of the effect of wafer tilt angles on various device metrics is presented and discussed.
format	article
author	Darpan Mishra Ramesh Kumar Sonkar
author_facet	Darpan Mishra Ramesh Kumar Sonkar
author_sort	Darpan Mishra
title	Effect of Wafer Tilt During Ion Implantation on the Performance of a Silicon Traveling-Wave Mach-Zehnder Modulator
title_short	Effect of Wafer Tilt During Ion Implantation on the Performance of a Silicon Traveling-Wave Mach-Zehnder Modulator
title_full	Effect of Wafer Tilt During Ion Implantation on the Performance of a Silicon Traveling-Wave Mach-Zehnder Modulator
title_fullStr	Effect of Wafer Tilt During Ion Implantation on the Performance of a Silicon Traveling-Wave Mach-Zehnder Modulator
title_full_unstemmed	Effect of Wafer Tilt During Ion Implantation on the Performance of a Silicon Traveling-Wave Mach-Zehnder Modulator
title_sort	effect of wafer tilt during ion implantation on the performance of a silicon traveling-wave mach-zehnder modulator
publisher	IEEE
publishDate	2021
url	https://doaj.org/article/f204a70833e440baa34a22ba1ea8d8c3
work_keys_str_mv	AT darpanmishra effectofwafertiltduringionimplantationontheperformanceofasilicontravelingwavemachzehndermodulator AT rameshkumarsonkar effectofwafertiltduringionimplantationontheperformanceofasilicontravelingwavemachzehndermodulator
_version_	1718425260466896896

Effect of Wafer Tilt During Ion Implantation on the Performance of a Silicon Traveling-Wave Mach-Zehnder Modulator

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