Effect of Wafer Tilt During Ion Implantation on the Performance of a Silicon Traveling-Wave Mach-Zehnder Modulator
This paper reports a study of the effect of wafer tilt during dopant implantation on the performance of silicon PN phase shifter and traveling-wave Mach-Zehnder modulator. The PN phase shifter is designed and process simulated to include the effects of different fabrication processes in the device p...
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| Autores principales: | , |
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| Formato: | article |
| Lenguaje: | EN |
| Publicado: |
IEEE
2021
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| Materias: | |
| Acceso en línea: | https://doaj.org/article/f204a70833e440baa34a22ba1ea8d8c3 |
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