Recent progress of oxide-TFT-based inverter technology

Oxide semiconductor-based thin-film transistor (oxide-TFT) technology have gained significant attention since the innovation of n-channel oxide-TFT using ZnO and amorphous In–Ga–Zn–O (a-IGZO) channels because of their superior device properties including excellent electrical property such as high TF...

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Autor principal:	Kenji Nomura
Formato:	article
Lenguaje:	EN
Publicado:	Taylor & Francis Group 2021
Materias:	oxide thin-film transistors (tfts) inverter cmos p-channel tft ring oscillator Computer engineering. Computer hardware TK7885-7895
Acceso en línea:	https://doaj.org/article/f208476351384cce9f84da873cf76437
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spelling	oai:doaj.org-article:f208476351384cce9f84da873cf764372021-11-26T11:19:47ZRecent progress of oxide-TFT-based inverter technology1598-03162158-160610.1080/15980316.2021.1977401https://doaj.org/article/f208476351384cce9f84da873cf764372021-10-01T00:00:00Zhttp://dx.doi.org/10.1080/15980316.2021.1977401https://doaj.org/toc/1598-0316https://doaj.org/toc/2158-1606Oxide semiconductor-based thin-film transistor (oxide-TFT) technology have gained significant attention since the innovation of n-channel oxide-TFT using ZnO and amorphous In–Ga–Zn–O (a-IGZO) channels because of their superior device properties including excellent electrical property such as high TFT mobility over >10 cm2/Vs and the low-cost manufacturability originating from the low-temperature processability. Already, n-channel a-IGZO-TFT is widely employed as a TFT pixel switching backplane for several high-performance active-matrix flat-panel displays, and oxide-TFT technology to date is well acknowledged as the best TFT technology for future device applications in the wide range area of electronics such as sensors, Internet of things (IoT), energy-harvesting, medical/bio-interface device, etc. Therefore, the development of large-scale circuit beyond discrete TFT device level becomes increasingly important and is vital to advance the next stage of oxide-TFT technology. In particular, developing oxide-TFT-based inverter device technology is the key for developing several digital and analog circuits. In this paper, the recent progress and challenges in oxide-TFT-based inverter technology, including unipolar NMOS, PMOS, CMOS, and CMOS-like inverters using ambipolar oxide-TFT, are reviewed.Kenji NomuraTaylor & Francis Grouparticleoxidethin-film transistors (tfts)invertercmosp-channel tftring oscillatorComputer engineering. Computer hardwareTK7885-7895ENJournal of Information Display, Vol 22, Iss 4, Pp 211-229 (2021)
institution	DOAJ
collection	DOAJ
language	EN
topic	oxide thin-film transistors (tfts) inverter cmos p-channel tft ring oscillator Computer engineering. Computer hardware TK7885-7895
spellingShingle	oxide thin-film transistors (tfts) inverter cmos p-channel tft ring oscillator Computer engineering. Computer hardware TK7885-7895 Kenji Nomura Recent progress of oxide-TFT-based inverter technology
description	Oxide semiconductor-based thin-film transistor (oxide-TFT) technology have gained significant attention since the innovation of n-channel oxide-TFT using ZnO and amorphous In–Ga–Zn–O (a-IGZO) channels because of their superior device properties including excellent electrical property such as high TFT mobility over >10 cm2/Vs and the low-cost manufacturability originating from the low-temperature processability. Already, n-channel a-IGZO-TFT is widely employed as a TFT pixel switching backplane for several high-performance active-matrix flat-panel displays, and oxide-TFT technology to date is well acknowledged as the best TFT technology for future device applications in the wide range area of electronics such as sensors, Internet of things (IoT), energy-harvesting, medical/bio-interface device, etc. Therefore, the development of large-scale circuit beyond discrete TFT device level becomes increasingly important and is vital to advance the next stage of oxide-TFT technology. In particular, developing oxide-TFT-based inverter device technology is the key for developing several digital and analog circuits. In this paper, the recent progress and challenges in oxide-TFT-based inverter technology, including unipolar NMOS, PMOS, CMOS, and CMOS-like inverters using ambipolar oxide-TFT, are reviewed.
format	article
author	Kenji Nomura
author_facet	Kenji Nomura
author_sort	Kenji Nomura
title	Recent progress of oxide-TFT-based inverter technology
title_short	Recent progress of oxide-TFT-based inverter technology
title_full	Recent progress of oxide-TFT-based inverter technology
title_fullStr	Recent progress of oxide-TFT-based inverter technology
title_full_unstemmed	Recent progress of oxide-TFT-based inverter technology
title_sort	recent progress of oxide-tft-based inverter technology
publisher	Taylor & Francis Group
publishDate	2021
url	https://doaj.org/article/f208476351384cce9f84da873cf76437
work_keys_str_mv	AT kenjinomura recentprogressofoxidetftbasedinvertertechnology
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Recent progress of oxide-TFT-based inverter technology

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