Recent progress of oxide-TFT-based inverter technology
Oxide semiconductor-based thin-film transistor (oxide-TFT) technology have gained significant attention since the innovation of n-channel oxide-TFT using ZnO and amorphous In–Ga–Zn–O (a-IGZO) channels because of their superior device properties including excellent electrical property such as high TF...
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| Formato: | article |
| Lenguaje: | EN |
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Taylor & Francis Group
2021
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| Acceso en línea: | https://doaj.org/article/f208476351384cce9f84da873cf76437 |
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