Recent progress of oxide-TFT-based inverter technology

Oxide semiconductor-based thin-film transistor (oxide-TFT) technology have gained significant attention since the innovation of n-channel oxide-TFT using ZnO and amorphous In–Ga–Zn–O (a-IGZO) channels because of their superior device properties including excellent electrical property such as high TF...

Descripción completa

Guardado en:
Detalles Bibliográficos
Autor principal: Kenji Nomura
Formato: article
Lenguaje:EN
Publicado: Taylor & Francis Group 2021
Materias:
Acceso en línea:https://doaj.org/article/f208476351384cce9f84da873cf76437
Etiquetas: Agregar Etiqueta
Sin Etiquetas, Sea el primero en etiquetar este registro!