Re-distribution of oxygen at the interface between γ-Al2O3 and TiN

Abstract Interface of TiN electrode with γ-Al2O3 layers was studied using near edge X-ray absorption fine structure, conventional X-ray photoelectron spectroscopy and photoelectron spectroscopy with high energies. Despite the atomic-layer deposited Al2O3 being converted into thermodynamically-stable...

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Autores principales:	E. O. Filatova, A. S. Konashuk, S. S. Sakhonenkov, A. A. Sokolov, V. V. Afanas’ev
Formato:	article
Lenguaje:	EN
Publicado:	Nature Portfolio 2017
Materias:	Medicine R Science Q
Acceso en línea:	https://doaj.org/article/f2532d72df254e3b9b1fa0442fa7826b
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spelling	oai:doaj.org-article:f2532d72df254e3b9b1fa0442fa7826b2021-12-02T15:04:51ZRe-distribution of oxygen at the interface between γ-Al2O3 and TiN10.1038/s41598-017-04804-42045-2322https://doaj.org/article/f2532d72df254e3b9b1fa0442fa7826b2017-07-01T00:00:00Zhttps://doi.org/10.1038/s41598-017-04804-4https://doaj.org/toc/2045-2322Abstract Interface of TiN electrode with γ-Al2O3 layers was studied using near edge X-ray absorption fine structure, conventional X-ray photoelectron spectroscopy and photoelectron spectroscopy with high energies. Despite the atomic-layer deposited Al2O3 being converted into thermodynamically-stable polycrystalline cubic γ-phase by high-temperature (1000 or 1100 °C) anneal, our results reveal formation of a thin TiNxOy (≈1-nm thick) interlayer at the interface between γ-Al2O3 film and TiN electrode due to oxygen scavenging from γ-Al2O3 film. Formation of the TiO2 was not observed at this interface. As environmental effect, a strong oxidation resulting in formation of a TiO2(1.4 nm)/TiNxOy(0.9 nm) overlayers on the top of the TiN electrode is traced. Development of O-deficiency of γ-Al2O3 is observed and related to the polarization anisotropy due to the preferential orientation of spin states involved in the X-ray absorption in the plane parallel to the surface. Investigation of the TiN electrode reveals the predominantly “stretched” octahedra in its structure with the preferential orientation relative the interface with γ-Al2O3. This anisotropy can be correlated with ≈200 meV electron barrier height increase at the O-deficient TiN/γ-Al2O3 interface as compared to the TiN/γ-Al2O3 barrier formed under abundant oxidant supply condition as revealed by internal photoemission of electrons from TiN into the oxide.E. O. FilatovaA. S. KonashukS. S. SakhonenkovA. A. SokolovV. V. Afanas’evNature PortfolioarticleMedicineRScienceQENScientific Reports, Vol 7, Iss 1, Pp 1-14 (2017)
institution	DOAJ
collection	DOAJ
language	EN
topic	Medicine R Science Q
spellingShingle	Medicine R Science Q E. O. Filatova A. S. Konashuk S. S. Sakhonenkov A. A. Sokolov V. V. Afanas’ev Re-distribution of oxygen at the interface between γ-Al2O3 and TiN
description	Abstract Interface of TiN electrode with γ-Al2O3 layers was studied using near edge X-ray absorption fine structure, conventional X-ray photoelectron spectroscopy and photoelectron spectroscopy with high energies. Despite the atomic-layer deposited Al2O3 being converted into thermodynamically-stable polycrystalline cubic γ-phase by high-temperature (1000 or 1100 °C) anneal, our results reveal formation of a thin TiNxOy (≈1-nm thick) interlayer at the interface between γ-Al2O3 film and TiN electrode due to oxygen scavenging from γ-Al2O3 film. Formation of the TiO2 was not observed at this interface. As environmental effect, a strong oxidation resulting in formation of a TiO2(1.4 nm)/TiNxOy(0.9 nm) overlayers on the top of the TiN electrode is traced. Development of O-deficiency of γ-Al2O3 is observed and related to the polarization anisotropy due to the preferential orientation of spin states involved in the X-ray absorption in the plane parallel to the surface. Investigation of the TiN electrode reveals the predominantly “stretched” octahedra in its structure with the preferential orientation relative the interface with γ-Al2O3. This anisotropy can be correlated with ≈200 meV electron barrier height increase at the O-deficient TiN/γ-Al2O3 interface as compared to the TiN/γ-Al2O3 barrier formed under abundant oxidant supply condition as revealed by internal photoemission of electrons from TiN into the oxide.
format	article
author	E. O. Filatova A. S. Konashuk S. S. Sakhonenkov A. A. Sokolov V. V. Afanas’ev
author_facet	E. O. Filatova A. S. Konashuk S. S. Sakhonenkov A. A. Sokolov V. V. Afanas’ev
author_sort	E. O. Filatova
title	Re-distribution of oxygen at the interface between γ-Al2O3 and TiN
title_short	Re-distribution of oxygen at the interface between γ-Al2O3 and TiN
title_full	Re-distribution of oxygen at the interface between γ-Al2O3 and TiN
title_fullStr	Re-distribution of oxygen at the interface between γ-Al2O3 and TiN
title_full_unstemmed	Re-distribution of oxygen at the interface between γ-Al2O3 and TiN
title_sort	re-distribution of oxygen at the interface between γ-al2o3 and tin
publisher	Nature Portfolio
publishDate	2017
url	https://doaj.org/article/f2532d72df254e3b9b1fa0442fa7826b
work_keys_str_mv	AT eofilatova redistributionofoxygenattheinterfacebetweengal2o3andtin AT askonashuk redistributionofoxygenattheinterfacebetweengal2o3andtin AT sssakhonenkov redistributionofoxygenattheinterfacebetweengal2o3andtin AT aasokolov redistributionofoxygenattheinterfacebetweengal2o3andtin AT vvafanasev redistributionofoxygenattheinterfacebetweengal2o3andtin
_version_	1718389053299097600

Re-distribution of oxygen at the interface between γ-Al2O3 and TiN

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